Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study

Zhi Chen; Kangguo Cheng; Jinju Lee; Joseph W. Lyding; Karl Hess; Sundar Chetlur

doi:10.1109/16.915732

Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study

Zhi Chen, Kangguo Cheng, Jinju Lee, Joseph W. Lyding, Karl Hess, Sundar Chetlur

Research output: Contribution to journal › Article › peer-review

Abstract

Several new phenomena are observed comparing the ac stress with the dc stress. In the initial stress period (< 30 s), the deuterium isotope effect is smaller for ac stress than for dc stress, which is ascribed to the hole injection. In the final stress stage (> 10⁴ s), the saturation of the G_m degradation stops and the G_m degradation starts to increase again for ac stress, which is probably due to the hole trapping.

Original language	English (US)
Pages (from-to)	813-815
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	4
DOIs	https://doi.org/10.1109/16.915732
State	Published - Apr 2001

Keywords

CMOS
Deuterium
Hot-carrier
Reliability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/16.915732

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AU - Chen, Zhi

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AU - Lyding, Joseph W.

AU - Hess, Karl

AU - Chetlur, Sundar

PY - 2001/4

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AB - Several new phenomena are observed comparing the ac stress with the dc stress. In the initial stress period (< 30 s), the deuterium isotope effect is smaller for ac stress than for dc stress, which is ascribed to the hole injection. In the final stress stage (> 104 s), the saturation of the Gm degradation stops and the Gm degradation starts to increase again for ac stress, which is probably due to the hole trapping.

KW - CMOS

KW - Deuterium

KW - Hot-carrier

KW - Reliability

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Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study

Abstract

Keywords

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