Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study

Zhi Chen, Kangguo Cheng, Jinju Lee, Joseph W Lyding, Karl Hess, Sundar Chetlur

Research output: Contribution to journalArticle

Abstract

Several new phenomena are observed comparing the ac stress with the dc stress. In the initial stress period (< 30 s), the deuterium isotope effect is smaller for ac stress than for dc stress, which is ascribed to the hole injection. In the final stress stage (> 104 s), the saturation of the Gm degradation stops and the Gm degradation starts to increase again for ac stress, which is probably due to the hole trapping.

Original languageEnglish (US)
Pages (from-to)813-815
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume48
Issue number4
DOIs
StatePublished - Apr 1 2001

Keywords

  • CMOS
  • Deuterium
  • Hot-carrier
  • Reliability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study'. Together they form a unique fingerprint.

  • Cite this