Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study

Zhi Chen, Kangguo Cheng, Jinju Lee, Joseph W. Lyding, Karl Hess, Sundar Chetlur

Research output: Contribution to journalArticlepeer-review


Several new phenomena are observed comparing the ac stress with the dc stress. In the initial stress period (< 30 s), the deuterium isotope effect is smaller for ac stress than for dc stress, which is ascribed to the hole injection. In the final stress stage (> 104 s), the saturation of the Gm degradation stops and the Gm degradation starts to increase again for ac stress, which is probably due to the hole trapping.

Original languageEnglish (US)
Pages (from-to)813-815
Number of pages3
JournalIEEE Transactions on Electron Devices
Issue number4
StatePublished - Apr 2001


  • CMOS
  • Deuterium
  • Hot-carrier
  • Reliability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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