Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition

Charlton J. Chen; Chad A. Husko; Inanc Meric; Ken L. Shepard; Chee Wei Wong; William M.J. Green; Yurii A. Vlasov; Solomon Assefa

doi:10.1063/1.3308492

Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition

Charlton J. Chen, Chad A. Husko, Inanc Meric, Ken L. Shepard, Chee Wei Wong, William M.J. Green, Yurii A. Vlasov, Solomon Assefa

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (redshift of 140±10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110±30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive postfabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification.

Original language	English (US)
Article number	081107
Journal	Applied Physics Letters
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.3308492
State	Published - 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3308492

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title = "Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition",

abstract = "We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (redshift of 140±10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110±30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive postfabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification.",

author = "Chen, {Charlton J.} and Husko, {Chad A.} and Inanc Meric and Shepard, {Ken L.} and Wong, {Chee Wei} and Green, {William M.J.} and Vlasov, {Yurii A.} and Solomon Assefa",

note = "Funding Information: This work was partially supported by DARPA, the New York State Foundation for Science, Technology, and Innovation, and the National Science Foundation (Grant Nos. ECCS-0622069 and CHE-0641523). The authors kindly thank J. F. McMillan and M. Eizenberg for useful discussions.",

year = "2010",

doi = "10.1063/1.3308492",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition

AU - Chen, Charlton J.

AU - Husko, Chad A.

AU - Meric, Inanc

AU - Shepard, Ken L.

AU - Wong, Chee Wei

AU - Green, William M.J.

AU - Vlasov, Yurii A.

AU - Assefa, Solomon

N1 - Funding Information: This work was partially supported by DARPA, the New York State Foundation for Science, Technology, and Innovation, and the National Science Foundation (Grant Nos. ECCS-0622069 and CHE-0641523). The authors kindly thank J. F. McMillan and M. Eizenberg for useful discussions.

PY - 2010

Y1 - 2010

N2 - We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (redshift of 140±10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110±30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive postfabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification.

AB - We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (redshift of 140±10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110±30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive postfabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification.

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ER -

Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition

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