Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition

Charlton J. Chen, Chad A. Husko, Inanc Meric, Ken L. Shepard, Chee Wei Wong, William M.J. Green, Yurii A. Vlasov, Solomon Assefa

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (redshift of 140±10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110±30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive postfabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification.

Original languageEnglish (US)
Article number081107
JournalApplied Physics Letters
Volume96
Issue number8
DOIs
StatePublished - 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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