Determination of the hydrogen density of states in amorphous hydrogenated silicon

W. B. Jackson, A. J. Franz, H. C. Jin, J. R. Abelson, J. L. Gland

Research output: Contribution to journalArticlepeer-review

Abstract

A method for determining the density of hydrogen binding energies from H evolution is presented and used to determine the hydrogen density of states (HDOS) in amorphous silicon. The method is based on fractional evolution where the temperature is ramped up and down until all the H is evolved. From the evolution curves, the H chemical potential is determined as a function of concentration that can be related to the H density of states. The fractional evolution extraction of the HDOS is tested on simulations of evolution, and is shown to yield good estimates of the underlying density of states. When applied to amorphous silicon, two peaks in the density of states at ∼ -1.8 eV and at about ∼ -2.2 eV below the transport level are found. A majority of the hydrogen (> 80%) resides in the shallow energy level.

Original languageEnglish (US)
Pages (from-to)143-147
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 1
DOIs
StatePublished - May 1998

Keywords

  • Amorphous hydrogenated silicon
  • Fractional evolution
  • Hydrogen density of states

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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