Abstract
The valence-band discontinuity ΔEv has been determined for the (100) InAs/GaSb system by x-ray photoemission core level spectroscopy. For 20 Å of InAs on GaSb we find that ΔEv=0.53 eV. The reverse structure, consisting of a 20-Å layer of GaSb on InAs, gave a measured value of ΔEv=0.48 eV. Since the difference in these two values lies within our experimental uncertainty, we report an average offset of 0.51±0.1 eV. The large value of the valence-band discontinuity in this system shows the band lineup to be of the broken gap variety with the InAs conduction-band energy lying below that of the GaSb valence band. This result is in good agreement with theoretical predictions.
Original language | English (US) |
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Pages (from-to) | 5337-5341 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 61 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1 1987 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)