Determination of the (100) InAs/GaSb heterojunction valence-band discontinuity by x-ray photoemission core level spectroscopy

G. J. Gualtieri; G. P. Schwartz; R. G. Nuzzo; R. J. Malik; J. F. Walker

doi:10.1063/1.338270

Determination of the (100) InAs/GaSb heterojunction valence-band discontinuity by x-ray photoemission core level spectroscopy

G. J. Gualtieri, G. P. Schwartz, R. G. Nuzzo, R. J. Malik, J. F. Walker

Research output: Contribution to journal › Article › peer-review

Abstract

The valence-band discontinuity ΔE_v has been determined for the (100) InAs/GaSb system by x-ray photoemission core level spectroscopy. For 20 Å of InAs on GaSb we find that ΔE_v=0.53 eV. The reverse structure, consisting of a 20-Å layer of GaSb on InAs, gave a measured value of ΔE_v=0.48 eV. Since the difference in these two values lies within our experimental uncertainty, we report an average offset of 0.51±0.1 eV. The large value of the valence-band discontinuity in this system shows the band lineup to be of the broken gap variety with the InAs conduction-band energy lying below that of the GaSb valence band. This result is in good agreement with theoretical predictions.

Original language	English (US)
Pages (from-to)	5337-5341
Number of pages	5
Journal	Journal of Applied Physics
Volume	61
Issue number	12
DOIs	https://doi.org/10.1063/1.338270
State	Published - Dec 1 1987
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Determination of the (100) InAs/GaSb heterojunction valence-band discontinuity by x-ray photoemission core level spectroscopy",

abstract = "The valence-band discontinuity ΔEv has been determined for the (100) InAs/GaSb system by x-ray photoemission core level spectroscopy. For 20 {\AA} of InAs on GaSb we find that ΔEv=0.53 eV. The reverse structure, consisting of a 20-{\AA} layer of GaSb on InAs, gave a measured value of ΔEv=0.48 eV. Since the difference in these two values lies within our experimental uncertainty, we report an average offset of 0.51±0.1 eV. The large value of the valence-band discontinuity in this system shows the band lineup to be of the broken gap variety with the InAs conduction-band energy lying below that of the GaSb valence band. This result is in good agreement with theoretical predictions.",

author = "Gualtieri, {G. J.} and Schwartz, {G. P.} and Nuzzo, {R. G.} and Malik, {R. J.} and Walker, {J. F.}",

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TY - JOUR

T1 - Determination of the (100) InAs/GaSb heterojunction valence-band discontinuity by x-ray photoemission core level spectroscopy

AU - Gualtieri, G. J.

AU - Schwartz, G. P.

AU - Nuzzo, R. G.

AU - Malik, R. J.

AU - Walker, J. F.

PY - 1987/12/1

Y1 - 1987/12/1

N2 - The valence-band discontinuity ΔEv has been determined for the (100) InAs/GaSb system by x-ray photoemission core level spectroscopy. For 20 Å of InAs on GaSb we find that ΔEv=0.53 eV. The reverse structure, consisting of a 20-Å layer of GaSb on InAs, gave a measured value of ΔEv=0.48 eV. Since the difference in these two values lies within our experimental uncertainty, we report an average offset of 0.51±0.1 eV. The large value of the valence-band discontinuity in this system shows the band lineup to be of the broken gap variety with the InAs conduction-band energy lying below that of the GaSb valence band. This result is in good agreement with theoretical predictions.

AB - The valence-band discontinuity ΔEv has been determined for the (100) InAs/GaSb system by x-ray photoemission core level spectroscopy. For 20 Å of InAs on GaSb we find that ΔEv=0.53 eV. The reverse structure, consisting of a 20-Å layer of GaSb on InAs, gave a measured value of ΔEv=0.48 eV. Since the difference in these two values lies within our experimental uncertainty, we report an average offset of 0.51±0.1 eV. The large value of the valence-band discontinuity in this system shows the band lineup to be of the broken gap variety with the InAs conduction-band energy lying below that of the GaSb valence band. This result is in good agreement with theoretical predictions.

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