A diagnostic which combines a quartz crystal microbalance (QCM) and a gridded energy analyzer has been developed to measure the metal flux ionization fraction in a modified commercial dc magnetron sputtering device. The sensor is mounted on a linear motion feedthrough and embedded in a slot in the substrate plane to allow for measuring the uniformity in deposition and ionization throughout the plane of the wafer. Radio-frequency (rf) power is introduced through a coil to ionize the Al atoms. The metal flux ionization fraction at the QCM is determined by comparing the total deposition rate with and without a bias that screens out the ions, but that leaves the plasma undisturbed. By varying the voltage applied to the grids, the plasma potential is determined. At a pressure of 35 mTorr, a magnetron power of 2 kW, and a net rf power of 310±5 W, 78±5% ionization was found.
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