Abstract
Most microwave transistor models are useful within specific frequency ranges; outside those ranges, they become inaccurate essentially because of the distributed nature of the active base resistance which is modeled as a lumped element. In this paper, a quantitative study of the two-dimensional current flow in the active region of an ion-implanted device leads to the synthesis of a small-signal model, emphasizing its relations to the distributed parameters defined. Mathods for extracting those parameters are proposed via expressions that relate them to electrical measurements at the terminals. A final section deals with the analysis of experimental data to verify the validity of a distributed equivalent circuit at frequencies up to 10 GHz.
Original language | English (US) |
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Pages (from-to) | 750-758 |
Number of pages | 9 |
Journal | IEEE Transactions on Electron Devices |
Volume | 30 |
Issue number | 7 |
DOIs | |
State | Published - Jul 1983 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering