Determination of a Small-Signal Model for Ion-Implanted Microwave Transistors

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Most microwave transistor models are useful within specific frequency ranges; outside those ranges, they become inaccurate essentially because of the distributed nature of the active base resistance which is modeled as a lumped element. In this paper, a quantitative study of the two-dimensional current flow in the active region of an ion-implanted device leads to the synthesis of a small-signal model, emphasizing its relations to the distributed parameters defined. Mathods for extracting those parameters are proposed via expressions that relate them to electrical measurements at the terminals. A final section deals with the analysis of experimental data to verify the validity of a distributed equivalent circuit at frequencies up to 10 GHz.

Original languageEnglish (US)
Pages (from-to)750-758
Number of pages9
JournalIEEE Transactions on Electron Devices
Issue number7
StatePublished - Jul 1983
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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