Detecting 20 nm wide defects in large area nanopatterns using optical interferometric microscopy

Renjie Zhou, Chris Edwards, Amir Arbabi, Gabriel Popescu, Lynford L Goddard

Research output: Contribution to journalArticle

Abstract

Due to the diffraction limited resolution and the presence of speckle noise, visible laser light is generally thought to be impractical for finding deep subwavelength defects in patterned semiconductor wafers. Here, we report on a nondestructive low-noise interferometric imaging method capable of detecting nanoscale defects within a wide field of view using visible light. The method uses a common-path laser interferometer and a combination of digital image processing techniques to produce 70 μm by 27 μm panoramic phase and amplitude images of the test nanopattern. Significant noise reduction and high sensitivity are achieved, which enables successful detection of several different types of sparse defects with sizes on the order of 20 nm wide by 100 nm long by 110 nm tall.

Original languageEnglish (US)
Pages (from-to)3716-3721
Number of pages6
JournalNano Letters
Volume13
Issue number8
DOIs
StatePublished - Aug 14 2013

Fingerprint

Optical microscopy
microscopy
Defects
defects
Lasers
Speckle
Noise abatement
noise reduction
Interferometers
low noise
field of view
lasers
image processing
Image processing
interferometers
Diffraction
wafers
Semiconductor materials
Imaging techniques
sensitivity

Keywords

  • defect inspection
  • Interferometric optical microscopy
  • metrology
  • nanotechnology
  • phase measurement

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Detecting 20 nm wide defects in large area nanopatterns using optical interferometric microscopy. / Zhou, Renjie; Edwards, Chris; Arbabi, Amir; Popescu, Gabriel; Goddard, Lynford L.

In: Nano Letters, Vol. 13, No. 8, 14.08.2013, p. 3716-3721.

Research output: Contribution to journalArticle

@article{3e814589aed04f9a919abb70eb7b5c35,
title = "Detecting 20 nm wide defects in large area nanopatterns using optical interferometric microscopy",
abstract = "Due to the diffraction limited resolution and the presence of speckle noise, visible laser light is generally thought to be impractical for finding deep subwavelength defects in patterned semiconductor wafers. Here, we report on a nondestructive low-noise interferometric imaging method capable of detecting nanoscale defects within a wide field of view using visible light. The method uses a common-path laser interferometer and a combination of digital image processing techniques to produce 70 μm by 27 μm panoramic phase and amplitude images of the test nanopattern. Significant noise reduction and high sensitivity are achieved, which enables successful detection of several different types of sparse defects with sizes on the order of 20 nm wide by 100 nm long by 110 nm tall.",
keywords = "defect inspection, Interferometric optical microscopy, metrology, nanotechnology, phase measurement",
author = "Renjie Zhou and Chris Edwards and Amir Arbabi and Gabriel Popescu and Goddard, {Lynford L}",
year = "2013",
month = "8",
day = "14",
doi = "10.1021/nl401622b",
language = "English (US)",
volume = "13",
pages = "3716--3721",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "8",

}

TY - JOUR

T1 - Detecting 20 nm wide defects in large area nanopatterns using optical interferometric microscopy

AU - Zhou, Renjie

AU - Edwards, Chris

AU - Arbabi, Amir

AU - Popescu, Gabriel

AU - Goddard, Lynford L

PY - 2013/8/14

Y1 - 2013/8/14

N2 - Due to the diffraction limited resolution and the presence of speckle noise, visible laser light is generally thought to be impractical for finding deep subwavelength defects in patterned semiconductor wafers. Here, we report on a nondestructive low-noise interferometric imaging method capable of detecting nanoscale defects within a wide field of view using visible light. The method uses a common-path laser interferometer and a combination of digital image processing techniques to produce 70 μm by 27 μm panoramic phase and amplitude images of the test nanopattern. Significant noise reduction and high sensitivity are achieved, which enables successful detection of several different types of sparse defects with sizes on the order of 20 nm wide by 100 nm long by 110 nm tall.

AB - Due to the diffraction limited resolution and the presence of speckle noise, visible laser light is generally thought to be impractical for finding deep subwavelength defects in patterned semiconductor wafers. Here, we report on a nondestructive low-noise interferometric imaging method capable of detecting nanoscale defects within a wide field of view using visible light. The method uses a common-path laser interferometer and a combination of digital image processing techniques to produce 70 μm by 27 μm panoramic phase and amplitude images of the test nanopattern. Significant noise reduction and high sensitivity are achieved, which enables successful detection of several different types of sparse defects with sizes on the order of 20 nm wide by 100 nm long by 110 nm tall.

KW - defect inspection

KW - Interferometric optical microscopy

KW - metrology

KW - nanotechnology

KW - phase measurement

UR - http://www.scopus.com/inward/record.url?scp=84881579516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84881579516&partnerID=8YFLogxK

U2 - 10.1021/nl401622b

DO - 10.1021/nl401622b

M3 - Article

C2 - 23899129

AN - SCOPUS:84881579516

VL - 13

SP - 3716

EP - 3721

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 8

ER -