Detailed in-situ monitoring of film growth: application to TiSi2 chemical vapor deposition

M. A. Mendicino, E. G. Seebauer

Research output: Contribution to journalArticlepeer-review


An experimental approach for monitoring chemical vapor deposition is described that combines in-situ, real-time monitoring of deposition rate and gas composition together with transfer capabilities into ultrahigh vacuum for Auger analysis. This approach has been applied in the specific case of TiSi2 low-pressure deposition on Si using TiCl4 and SiH4. In the early stages of growth, Si for the growing film is supplied directly from the substrate. In later stages, Si arrives through SiH4 adsorption. The primary gas phase reaction products are H2, HCl, SiH3Cl and the radical species SiCl2. Removing surface contamination from the substrate is not sufficient to promote film nucleation; surface defects are apparently required as well. Steady-state multiplicity in the reaction rate is observed near 700°C for large SiH4:TiCl4 ratios.

Original languageEnglish (US)
Pages (from-to)377-385
Number of pages9
JournalJournal of Crystal Growth
Issue number3-4
StatePublished - Dec 1993

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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