Design tradeoffs between traditional hexagonal and emerging cubic InXGa(1-X)N/GaN-based green light-emitting diodes

Research output: Contribution to journalArticlepeer-review

Abstract

Here, we report on the design tradeoffs between traditional hexagonal and emerging cubic InXGa(1−X)N/GaNbased green (520 nm ≤ λ≤ 550 nm) light-emitting diodes with special emphasis on the electron blocking layer, number of quantum wells, and thicknesses of quantum wells and barriers. We identified three crucial design rules for cubic green light-emitting diodes: (1) no need for an electron blocking layer; (2) use of a wide quantum well; and (3) choice of thin quantum barriers in multi-quantum well light-emitting diode designs. These design rules increase the internal quantum efficiency of cubic green light-emitting diodes by ∼30.5% under 100 A/cm2 injection with respect to traditional designs. Overall, the design rules of cubic light-emitting diodes and their differentiating nature from the traditional, hexagonal ones are crucial for the advent of next-generation cubic light-emitting diodes.

Original languageEnglish (US)
Pages (from-to)1017-1023
Number of pages7
JournalJournal of the Optical Society of America B: Optical Physics
Volume40
Issue number5
DOIs
StatePublished - May 2023

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Atomic and Molecular Physics, and Optics

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