TY - JOUR
T1 - Design of variable gain amplifier with gain-bandwidth product up to 354 GHz implemented in InP-InGaAs DHBT technology
AU - Lai, Jie Wei
AU - Chuang, Yu Ju
AU - Cimino, Kurt
AU - Feng, Milton
N1 - Manuscript received March 25, 2005. This work was supported in part by the Army Research Laboratory under Contract DAAD17-02-C-0115 and by the Defense Advanced Research Projects Agency. The authors are with the Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Champaign, IL 61801 USA (e-mail: [email protected]). Digital Object Identifier 10.1109/TMTT.2005.862676
PY - 2006/2
Y1 - 2006/2
N2 - A high-gain and wide-band variable gain amplifier (VGA) is developed using 300-GHz InP-InGaAs double-heterojunction bipolar transistor (DHBT). Negative-RE quad is used to enhance amplifier gain-bandwidth product. At maximum gain, the single-ended S21 of 17 dB and the associated 3-dB bandwidth of 50 GHz are measured to produce a gain-bandwidth product of 354 GHz in a VGA including a Gilbert multiplier and an output driver. The gain-bandwidth product is twice the value measured from the VGA designed by single resistor degeneration in the same process. The circuit is designed in terms of detailed stability considerations and the experimental results show it to be unconditionally stable over 0.5-50 GHz. The linearity of the VGA is affected by nonlinear effects in DHBTs, and different design approaches are analyzed. An output interception point of the third harmonic of 16.2 dBm is measured.
AB - A high-gain and wide-band variable gain amplifier (VGA) is developed using 300-GHz InP-InGaAs double-heterojunction bipolar transistor (DHBT). Negative-RE quad is used to enhance amplifier gain-bandwidth product. At maximum gain, the single-ended S21 of 17 dB and the associated 3-dB bandwidth of 50 GHz are measured to produce a gain-bandwidth product of 354 GHz in a VGA including a Gilbert multiplier and an output driver. The gain-bandwidth product is twice the value measured from the VGA designed by single resistor degeneration in the same process. The circuit is designed in terms of detailed stability considerations and the experimental results show it to be unconditionally stable over 0.5-50 GHz. The linearity of the VGA is affected by nonlinear effects in DHBTs, and different design approaches are analyzed. An output interception point of the third harmonic of 16.2 dBm is measured.
KW - Heterojunction bipolar transistors (HBTs)
KW - High-frequency amplifiers
KW - High-speed integrated circuits
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U2 - 10.1109/TMTT.2005.862676
DO - 10.1109/TMTT.2005.862676
M3 - Article
AN - SCOPUS:33144478310
SN - 0018-9480
VL - 54
SP - 599
EP - 607
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 2
ER -