Design of piezoresistive silicon cantilevers with stress concentration region (SCR) for scanning probe microscopy (SPM) applications

A. Gupta, R. Bashir, G. W. Neudeck, M. McElfresh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes and evaluates the incorporation of novel Stress Concentration Region (SCR) in silicon based cantilevers to enhance piezoresistive displacement, force, and torque sensitivities. In brief, SCR is a region, on the cantilever, with a thickness smaller than the cantilever thickness and of an appropriate length to localize stress where piezoresistors are implanted. It was found that in order to improve the sensitivity the length, thickness and placement of the SCR on the cantilever have to be optimized. Performing the optimization can result in a 2X, 5X and 3X improvement in the piezoresistive displacement, force and torque sensitivity, respectively. ANSYS, a well-known Finite Element Analysis (FEA) software, was used to analyze and optimize the above stated parameters of the SCR.

Original languageEnglish (US)
Title of host publication2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
EditorsM. Laudon, B. Romanowicz
Pages617-620
Number of pages4
StatePublished - 2000
Externally publishedYes
Event2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 - San Diego, CA, United States
Duration: Mar 27 2000Mar 29 2000

Publication series

Name2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Other

Other2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
Country/TerritoryUnited States
CitySan Diego, CA
Period3/27/003/29/00

Keywords

  • Atomic Force Microscopy (AFM)
  • Cantilever Design
  • Finite Element Analysis (FEA)
  • Piezoresistivity
  • Sensitivity

ASJC Scopus subject areas

  • General Engineering

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