Design of low-voltage highly linear switched-R-MOSFET-C filters

Peter Kurahashi, Pavan Kumar Hanumolu, Gabor C. Temes, Un Ku Moon

Research output: Contribution to journalArticlepeer-review

Abstract

This paper discusses the design, analysis and performance of a low-voltage, highly linear switched-R-MOSFET-C filter. High linearity, even at a low supply voltage, is achieved through the use of duty-cycle-controlled tuning. Tuning MOSFETs are switched completely on while conducting, such that their nonlinear resistance is much smaller than the linear filter resistors, resulting in low distortion. The MOSFETs are also placed inside the filter feedback loop which further reduces distortion. Because tuning is done in the time domain, rather than in the voltage domain, the tuning range is independent of the supply voltage. The filter achieves -77 dB total harmonic distortion (THD) using a 0.6-V supply, and -90 dB THD using a 0.8-V supply, with a 0.6-Vpp differential 2 kHz sine input. The prototype IC, implemented in a 0.18-μm CMOS process, occupies an area of 0.7 mm2 and consumes 1 mW of power from a 0.6-V supply.

Original languageEnglish (US)
Pages (from-to)1699-1708
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume42
Issue number8
DOIs
StatePublished - Aug 2007
Externally publishedYes

Keywords

  • Duty cycle control
  • Linear
  • Low voltage
  • Masterslave tuning
  • Pulse width modulation
  • R-MOSFET-C
  • Switched filters
  • Tunable filters

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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