Abstract
This paper presents data of an enhanced version of the BRAQWET, where an additional 70-angstrom InP barrier layer has been added between the reservoir and the quantum well. This additional barrier serves to increase the confinement of the wavefunction to the quantum well. For this reason this new structure is referred to as DBRAQWET, to signify the presence of a double barrier. Optical simulations employing a Poisson-Schrodinger self-consistent scheme shows clearly the increase in absorption and the accompanying increase in differential absorption. Samples were grown by chemical beam epitaxy (CBE) with five DBRAQWET structures within a planar waveguide. Transmission electron micrographs reveal some interface roughness between the quaternary reservoir and the quantum well, however a 70-angstrom InP layer successfully planarized the quantum well interface.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 489-490 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA Duration: Jun 2 1996 → Jun 7 1996 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering