Abstract
In this paper, we present extensive measurement results investigating the design and optimization of vertical SiGe thyristors for use as ESD protection elements in RF integrated circuits. Experiments include variations of the anode material, contact geometry, and buried layer, as well as a detailed study of optimal area scaling. RF characterization using s-parameter data is presented.
Original language | English (US) |
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Pages (from-to) | 586-593 |
Number of pages | 8 |
Journal | IEEE Transactions on Device and Materials Reliability |
Volume | 4 |
Issue number | 4 |
DOIs | |
State | Published - Dec 2004 |
Keywords
- Electrostatic discharges
- Heterojunction bipolar transistors
- Reliability
- Thyristors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering