Design and operation of distributed feedback transistor lasers

F. Dixon; M. Feng; N. Holonyak

doi:10.1063/1.3504608

Design and operation of distributed feedback transistor lasers

F. Dixon, M. Feng, N. Holonyak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The design and fabrication methods utilizing soft photocurable nanoimprint lithography to realize single longitudinal mode distributed feedback transistor lasers are investigated. Coupled-mode theory and the effective index method are used to determine accurately the periodic dimensions necessary to integrate a surface grating in the top emitter AlGaAs confining layers of an InGaP/GaAs/InGaAs heterojunction bipolar transistor laser. Electrical and optical device data confirm the design methods. The distributed feedback device produces continuous wave laser operation with a peak wavelength λ=959.75 nm and threshold current I_B =13 mA operating at -70 °C. For devices with cleaved ends a side mode suppression ratio >25 dB has been achieved.

Original language	English (US)
Article number	093109
Journal	Journal of Applied Physics
Volume	108
Issue number	9
DOIs	https://doi.org/10.1063/1.3504608
State	Published - Nov 1 2010

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3504608

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title = "Design and operation of distributed feedback transistor lasers",

abstract = "The design and fabrication methods utilizing soft photocurable nanoimprint lithography to realize single longitudinal mode distributed feedback transistor lasers are investigated. Coupled-mode theory and the effective index method are used to determine accurately the periodic dimensions necessary to integrate a surface grating in the top emitter AlGaAs confining layers of an InGaP/GaAs/InGaAs heterojunction bipolar transistor laser. Electrical and optical device data confirm the design methods. The distributed feedback device produces continuous wave laser operation with a peak wavelength λ=959.75 nm and threshold current IB =13 mA operating at -70 °C. For devices with cleaved ends a side mode suppression ratio >25 dB has been achieved.",

author = "F. Dixon and M. Feng and N. Holonyak",

note = "Funding Information: N. Holonyak, Jr., is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr., Chair of Electrical and Computer Engineering. We would like to thank Dr. K. Meneou and Professor K. Y. Cheng for the transfer and advice on NIL technology for DFB gratings. The authors would like to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support by Army Research Office, Grant No. W911NF-08-1-0469.",

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N2 - The design and fabrication methods utilizing soft photocurable nanoimprint lithography to realize single longitudinal mode distributed feedback transistor lasers are investigated. Coupled-mode theory and the effective index method are used to determine accurately the periodic dimensions necessary to integrate a surface grating in the top emitter AlGaAs confining layers of an InGaP/GaAs/InGaAs heterojunction bipolar transistor laser. Electrical and optical device data confirm the design methods. The distributed feedback device produces continuous wave laser operation with a peak wavelength λ=959.75 nm and threshold current IB =13 mA operating at -70 °C. For devices with cleaved ends a side mode suppression ratio >25 dB has been achieved.

AB - The design and fabrication methods utilizing soft photocurable nanoimprint lithography to realize single longitudinal mode distributed feedback transistor lasers are investigated. Coupled-mode theory and the effective index method are used to determine accurately the periodic dimensions necessary to integrate a surface grating in the top emitter AlGaAs confining layers of an InGaP/GaAs/InGaAs heterojunction bipolar transistor laser. Electrical and optical device data confirm the design methods. The distributed feedback device produces continuous wave laser operation with a peak wavelength λ=959.75 nm and threshold current IB =13 mA operating at -70 °C. For devices with cleaved ends a side mode suppression ratio >25 dB has been achieved.

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Design and operation of distributed feedback transistor lasers

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