Design and operation of distributed feedback transistor lasers

F. Dixon, M. Feng, N. Holonyak

Research output: Contribution to journalArticlepeer-review


The design and fabrication methods utilizing soft photocurable nanoimprint lithography to realize single longitudinal mode distributed feedback transistor lasers are investigated. Coupled-mode theory and the effective index method are used to determine accurately the periodic dimensions necessary to integrate a surface grating in the top emitter AlGaAs confining layers of an InGaP/GaAs/InGaAs heterojunction bipolar transistor laser. Electrical and optical device data confirm the design methods. The distributed feedback device produces continuous wave laser operation with a peak wavelength λ=959.75 nm and threshold current IB =13 mA operating at -70 °C. For devices with cleaved ends a side mode suppression ratio >25 dB has been achieved.

Original languageEnglish (US)
Article number093109
JournalJournal of Applied Physics
Issue number9
StatePublished - Nov 1 2010

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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