Design and novel turn-off mechanism in transistor lasers

Research output: Contribution to journalArticlepeer-review


We provide a quantitative analysis of the spontaneous recombination time in the quantum well (QW) of a transistor laser (TL) that shows that owing to the heavy doping in the base of the transistor, Auger recombination is responsible for the short carrier lifetime and low quantum efficiency of the device. By taking advantage of the QW location close to the collector in the TL three-terminal configuration, we devise a new turn-off mechanism that results in quick electron tunneling through the QW barrier by applying a high base-collector reverse bias to deplete the QW and suppress further recombination. For practical base-collector reverse bias, tunneling time from the QW is on the order of 10th of picosecond, which with a lighter base doping density would simultaneously achieve a fast TL turn-off response, while reducing Auger recombination.

Original languageEnglish (US)
Article number034018
JournalJPhys Photonics
Issue number3
StatePublished - Jul 2021
Externally publishedYes


  • Computational modeling
  • Speed response
  • Three-terminal photonics
  • Tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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