Abstract
A novel coherent mid-infrared emission source, the transistor-injected quantum cascade laser, is designed and modeled. Band engineering of the quantum cascade laser ensures desired lasing wavelength and a plasmon-enhanced waveguide is employed to confine the optical field. By incorporating the quantum cascade lasing region into a conventional heterojunction bipolar transistor, independent control of current and field through the lasing region is achieved. Higher differential quantum efficiency and lower threshold current density are also predicted.
| Original language | English (US) |
|---|---|
| Pages | 75-78 |
| Number of pages | 4 |
| State | Published - 2014 |
| Event | 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 - Denver, CO, United States Duration: May 19 2014 → May 22 2014 |
Other
| Other | 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 |
|---|---|
| Country/Territory | United States |
| City | Denver, CO |
| Period | 5/19/14 → 5/22/14 |
Keywords
- Aluminum gallium arsenide
- Gallium arsenide
- Quantum cascade laser
- Transistor laser
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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