Design and modeling of mid-infrared transistor-injected quantum cascade lasers

Kanuo Chen, John Dallesasse

Research output: Contribution to conferencePaper

Abstract

A novel coherent mid-infrared emission source, the transistor-injected quantum cascade laser, is designed and modeled. Band engineering of the quantum cascade laser ensures desired lasing wavelength and a plasmon-enhanced waveguide is employed to confine the optical field. By incorporating the quantum cascade lasing region into a conventional heterojunction bipolar transistor, independent control of current and field through the lasing region is achieved. Higher differential quantum efficiency and lower threshold current density are also predicted.

Original languageEnglish (US)
Pages75-78
Number of pages4
StatePublished - Jan 1 2014
Event2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 - Denver, CO, United States
Duration: May 19 2014May 22 2014

Other

Other2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014
CountryUnited States
CityDenver, CO
Period5/19/145/22/14

Keywords

  • Aluminum gallium arsenide
  • Gallium arsenide
  • Quantum cascade laser
  • Transistor laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Chen, K., & Dallesasse, J. (2014). Design and modeling of mid-infrared transistor-injected quantum cascade lasers. 75-78. Paper presented at 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014, Denver, CO, United States.