Design and layout of multi ghz operation of light emitting diodes

Chao Hsin Wu, Gabriel Walter, Han Wui Then, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new high-speed form of light emitting diode (LED) is demonstrated by utilizing an n-type buried "drain" layer beneath the p-type "base" quantum-well (carrier and photon) active region. The asymmetric two-junction LED employs the "drain" layer to tilt and pin the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), thus preserving the fast recombination lifetime in the order of carrier transit time in the thin base design (τB ∼ τt) by removal of excess slow-recombining carriers in the base. A modified layout based on the tilted-charge LED characteristics is designed to further reduce the parasitics compared to conventional aperture design, and significantly enhance the spontaneous optical modulation bandwidth toward multi-GHz operation.

Original languageEnglish (US)
Title of host publication2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010
StatePublished - 2010
Event2010 International Conference on Compound Semiconductor Manufacturing Technology - Portland, OR, United States
Duration: May 17 2010May 20 2010

Other

Other2010 International Conference on Compound Semiconductor Manufacturing Technology
CountryUnited States
CityPortland, OR
Period5/17/105/20/10

Keywords

  • GHz
  • LED
  • LET
  • Modulation
  • Spontaneous

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Design and layout of multi ghz operation of light emitting diodes'. Together they form a unique fingerprint.

  • Cite this

    Wu, C. H., Walter, G., Then, H. W., & Feng, M. (2010). Design and layout of multi ghz operation of light emitting diodes. In 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010