This paper describes a 1 Gb/s fully monolithic integrated GaAs OEIC receiver based on 0.6 μm gate length D-mode MESFET technology. The adoption of 0.85 μm short wavelength standard permits the integration of low capacitance MSM photodetectors and conventional electronic circuitry onto a single chip. Hence, the viability of low-cost manufacturing of high-speed optoelectronic devices will be improved. The design, fabrication, and testing of the receiver chip is discussed in detail. A BER of less than 10-9 at 1 Gb/s has been achieved for optical power of -20.5 dBm with a dynamic range of greater than 32 dB. This performance is sufficient for practical use in optical data link systems operating at gigabit/s data rates.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Lightwave Technology|
|State||Published - Jun 1996|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics