Design and fabrication of 5Gb/s fully integrated OEIC receivers using direct ion implanted GaAs MESFET-MSM

C. G. Shih; D. Barlage; J. S. Wang; M. Feng

Design and fabrication of 5Gb/s fully integrated OEIC receivers using direct ion implanted GaAs MESFET-MSM

C. G. Shih, D. Barlage, J. S. Wang, M. Feng

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a high performance blanket ion implanted 0.6 μm GaAs-MESFET/MSM receiver circuit. The receiver is fabricated without the use of a grown layer which opens the door for low cost applications. The significance of this work is that the full receiver exhibits an electrical dynamic range of 36 dB, and produces a minimum 700 mV electrical output signals at -15 dBm optical input. Data rates in excess of 5Gb/s have been achieved utilizing a 75×75 μm MSM detector.

Original language	English (US)
Title of host publication	IEEE MTT-S International Microwave Symposium Digest
Publisher	Publ by IEEE
Pages	1379-1382
Number of pages	4
ISBN (Print)	0780317793
State	Published - 1994
Event	Proceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA Duration: May 23 1994 → May 27 1994

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	3
ISSN (Print)	0149-645X

Other

Other	Proceedings of the IEEE MTT-S International Microwave Symposium
City	San Diego, CA, USA
Period	5/23/94 → 5/27/94

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Library availability

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Design and fabrication of 5Gb/s fully integrated OEIC receivers using direct ion implanted GaAs MESFET-MSM. / Shih, C. G.; Barlage, D.; Wang, J. S. et al.
IEEE MTT-S International Microwave Symposium Digest. Publ by IEEE, 1994. p. 1379-1382 (IEEE MTT-S International Microwave Symposium Digest; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shih, CG, Barlage, D, Wang, JS & Feng, M 1994, Design and fabrication of 5Gb/s fully integrated OEIC receivers using direct ion implanted GaAs MESFET-MSM. in IEEE MTT-S International Microwave Symposium Digest. IEEE MTT-S International Microwave Symposium Digest, vol. 3, Publ by IEEE, pp. 1379-1382, Proceedings of the IEEE MTT-S International Microwave Symposium, San Diego, CA, USA, 5/23/94.

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AU - Feng, M.

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AB - We report a high performance blanket ion implanted 0.6 μm GaAs-MESFET/MSM receiver circuit. The receiver is fabricated without the use of a grown layer which opens the door for low cost applications. The significance of this work is that the full receiver exhibits an electrical dynamic range of 36 dB, and produces a minimum 700 mV electrical output signals at -15 dBm optical input. Data rates in excess of 5Gb/s have been achieved utilizing a 75×75 μm MSM detector.

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Design and fabrication of 5Gb/s fully integrated OEIC receivers using direct ion implanted GaAs MESFET-MSM

Abstract

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Other

ASJC Scopus subject areas

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