Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition

Xiuling Li, J. J. Coleman

Research output: Contribution to journalArticle

Abstract

We have studied the luminescence properties of GaN films grown by metalorganic chemical vapor deposition using depth-resolved and excitation power dependent cathodoluminescence spectroscopy. In the thickness range we studied (∼3 μm), the luminescence properties, measured by the ratio of band-edge emission to the yellow band intensity, improve as the layer thickness increases.

Original languageEnglish (US)
Pages (from-to)438-440
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number4
DOIs
StatePublished - Jan 27 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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