Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition

X. Li; J. J. Coleman

doi:10.1063/1.118174

Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition

X. Li, J. J. Coleman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the luminescence properties of GaN films grown by metalorganic chemical vapor deposition using depth-resolved and excitation power dependent cathodoluminescence spectroscopy. In the thickness range we studied (∼3 μm), the luminescence properties, measured by the ratio of band-edge emission to the yellow band intensity, improve as the layer thickness increases.

Original language	English (US)
Pages (from-to)	438-440
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	4
DOIs	https://doi.org/10.1063/1.118174
State	Published - Jan 27 1997

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Physics and Astronomy (miscellaneous)

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10.1063/1.118174

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@article{ae9bab17b4e24f398360962c4093b8ed,

title = "Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition",

abstract = "We have studied the luminescence properties of GaN films grown by metalorganic chemical vapor deposition using depth-resolved and excitation power dependent cathodoluminescence spectroscopy. In the thickness range we studied (∼3 μm), the luminescence properties, measured by the ratio of band-edge emission to the yellow band intensity, improve as the layer thickness increases.",

author = "X. Li and Coleman, {J. J.}",

year = "1997",

month = jan,

day = "27",

doi = "10.1063/1.118174",

language = "English (US)",

volume = "70",

pages = "438--440",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition

AU - Li, X.

AU - Coleman, J. J.

PY - 1997/1/27

Y1 - 1997/1/27

N2 - We have studied the luminescence properties of GaN films grown by metalorganic chemical vapor deposition using depth-resolved and excitation power dependent cathodoluminescence spectroscopy. In the thickness range we studied (∼3 μm), the luminescence properties, measured by the ratio of band-edge emission to the yellow band intensity, improve as the layer thickness increases.

AB - We have studied the luminescence properties of GaN films grown by metalorganic chemical vapor deposition using depth-resolved and excitation power dependent cathodoluminescence spectroscopy. In the thickness range we studied (∼3 μm), the luminescence properties, measured by the ratio of band-edge emission to the yellow band intensity, improve as the layer thickness increases.

UR - http://www.scopus.com/inward/record.url?scp=3943096921&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3943096921&partnerID=8YFLogxK

U2 - 10.1063/1.118174

DO - 10.1063/1.118174

M3 - Article

AN - SCOPUS:3943096921

SN - 0003-6951

VL - 70

SP - 438

EP - 440

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition

Abstract

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