Depth profiles of strain in In0.10Ga0.90As/GaAs multiquantum well structures obtained by variable-pump wavelength photoluminescence

C. O. Griffiths, S. L. Cooper, M. V. Klein, D. V. Forbes, J. J. Coleman

Research output: Contribution to journalArticle

Abstract

We have performed photoluminescence measurements probing the strain in a set of In0.10Ga0.90As/GaAs multiquantum well (MQW) samples. By using different continuous wave pump laser wavelengths we obtain a depth profile of strain in individual quantum wells within the MQW structure. We also present evidence for the existence of an equilibrium strain between In0.10Ga0.90As quantum well layers and GaAs barrier layers for thick strain-relaxed MQW structures.

Original languageEnglish (US)
Pages (from-to)2123-2125
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number15
DOIs
StatePublished - Dec 1 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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