Depth profiles of strain in In0.10Ga0.90As/GaAs multiquantum well structures obtained by variable-pump wavelength photoluminescence

C. O. Griffiths; S. L. Cooper; M. V. Klein; D. V. Forbes; J. J. Coleman

doi:10.1063/1.110560

Depth profiles of strain in In_0.10Ga_0.90As/GaAs multiquantum well structures obtained by variable-pump wavelength photoluminescence

C. O. Griffiths, S. L. Cooper, M. V. Klein, D. V. Forbes, J. J. Coleman

Research output: Contribution to journal › Article › peer-review

Abstract

We have performed photoluminescence measurements probing the strain in a set of In_0.10Ga_0.90As/GaAs multiquantum well (MQW) samples. By using different continuous wave pump laser wavelengths we obtain a depth profile of strain in individual quantum wells within the MQW structure. We also present evidence for the existence of an equilibrium strain between In_0.10Ga_0.90As quantum well layers and GaAs barrier layers for thick strain-relaxed MQW structures.

Original language	English (US)
Pages (from-to)	2123-2125
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	15
DOIs	https://doi.org/10.1063/1.110560
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.110560

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title = "Depth profiles of strain in In0.10Ga0.90As/GaAs multiquantum well structures obtained by variable-pump wavelength photoluminescence",

abstract = "We have performed photoluminescence measurements probing the strain in a set of In0.10Ga0.90As/GaAs multiquantum well (MQW) samples. By using different continuous wave pump laser wavelengths we obtain a depth profile of strain in individual quantum wells within the MQW structure. We also present evidence for the existence of an equilibrium strain between In0.10Ga0.90As quantum well layers and GaAs barrier layers for thick strain-relaxed MQW structures.",

author = "Griffiths, {C. O.} and Cooper, {S. L.} and Klein, {M. V.} and Forbes, {D. V.} and Coleman, {J. J.}",

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AU - Griffiths, C. O.

AU - Cooper, S. L.

AU - Klein, M. V.

AU - Forbes, D. V.

AU - Coleman, J. J.

PY - 1993

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AB - We have performed photoluminescence measurements probing the strain in a set of In0.10Ga0.90As/GaAs multiquantum well (MQW) samples. By using different continuous wave pump laser wavelengths we obtain a depth profile of strain in individual quantum wells within the MQW structure. We also present evidence for the existence of an equilibrium strain between In0.10Ga0.90As quantum well layers and GaAs barrier layers for thick strain-relaxed MQW structures.

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