Depth distribution of reactive ion etching-induced damage in InAlAs/InGaAs heterostructures evaluated by Hall measurements

Keyphrases

• InAlAs 100%
• Induced Damage 100%
• 2-dimensional Electron Gas (2DEG) 100%
• Hall Measurement 100%
• Depth Distribution 100%
• Reactive Ion Etching 100%
• InGaAs Heterostructures 100%
• Defect Distribution 100%
• Carrier Density 66%
• Low Temperature 33%
• Defect Production 33%
• Penetration Depth 33%
• Ion Channels 33%
• Possible Mechanisms 33%
• Ion Range 33%
• Exponential Distribution 33%
• Etching Time 33%
• Ion Diffusion 33%
• Defect-induced 33%
• Self-bias Voltage 33%
• Self-bias 33%

Engineering

• Defects 100%
• Two Dimensional 100%
• Indium Gallium Arsenide 100%
• Heterostructures 100%
• Induced Damage 100%
• Carrier Density 66%
• Low-Temperature 33%
• Induced Defect 33%
• Exponential Distribution 33%
• Penetration Depth 33%
• Bias Voltage 33%
• Channelling 33%

Material Science

• Carrier Concentration 100%
• Indium Gallium Arsenide 100%
• Heterojunction 100%
• Reactive Ion Etching 100%