Depth dependence of dopant induced features on the Si(100)2×1:H surface and its application for three dimensional dopant profiling

The lack of surface states within the band gap of the perfect Si(100)2×1:H surface opens the way to scanning tunneling microscopy studies of dopant atom sites in Si(100). In this paper, Boron and Arsenic induced features are studied by ultrahigh vacuum scanning tunneling microscopy. The values of their amplitudes naturally group such that several subsurface layers can be identified. This technique for producing atom-resolved three-dimensional maps of electrically active dopants in silicon may be a useful metric for characterizing dopant profiles in ultra-small electronic device structures.