Depth dependence of dopant induced features on the Si(100)2×1:H surface and its application for three dimensional dopant profiling

Lequn Liu, Jixin Yu, Joseph W. Lyding

Research output: Contribution to journalConference article

Abstract

The lack of surface states within the band gap of the perfect Si(100)2×1:H surface opens the way to scanning tunneling microscopy studies of dopant atom sites in Si(100). In this paper, Boron and Arsenic induced features are studied by ultrahigh vacuum scanning tunneling microscopy. The values of their amplitudes naturally group such that several subsurface layers can be identified. This technique for producing atom-resolved three-dimensional maps of electrically active dopants in silicon may be a useful metric for characterizing dopant profiles in ultra-small electronic device structures.

Original languageEnglish (US)
Pages (from-to)207-211
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume699
StatePublished - Jan 1 2002
EventElectrically Based Microstructural Characterization III - Boston, MA, United States
Duration: Nov 26 2001Nov 29 2001

Fingerprint

scanning tunneling microscopy
Doping (additives)
Scanning tunneling microscopy
arsenic
ultrahigh vacuum
atoms
Atoms
boron
Boron
Arsenic
Surface states
Ultrahigh vacuum
Silicon
Energy gap
silicon
profiles
electronics

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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N2 - The lack of surface states within the band gap of the perfect Si(100)2×1:H surface opens the way to scanning tunneling microscopy studies of dopant atom sites in Si(100). In this paper, Boron and Arsenic induced features are studied by ultrahigh vacuum scanning tunneling microscopy. The values of their amplitudes naturally group such that several subsurface layers can be identified. This technique for producing atom-resolved three-dimensional maps of electrically active dopants in silicon may be a useful metric for characterizing dopant profiles in ultra-small electronic device structures.

AB - The lack of surface states within the band gap of the perfect Si(100)2×1:H surface opens the way to scanning tunneling microscopy studies of dopant atom sites in Si(100). In this paper, Boron and Arsenic induced features are studied by ultrahigh vacuum scanning tunneling microscopy. The values of their amplitudes naturally group such that several subsurface layers can be identified. This technique for producing atom-resolved three-dimensional maps of electrically active dopants in silicon may be a useful metric for characterizing dopant profiles in ultra-small electronic device structures.

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