Deposition and STM investigation of single-walled carbon nanotubes on GaAs(110)

Laura B. Ruppalt, Peter M. Albrecht, Joseph W Lyding

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have applied single walled carbon nanotubes (SWNTs) to the cleaved GaAs (110) surface in ultra high vacuum using a Dry Contact Transfer (DCT) procedure and studied the system using a scanning tunneling microscope (STM). STM images reveal a clean transfer of predominantly isolated SWNTs to the semiconductor surface, with minimal additional contamination to the substrate surface. Atomic features of the nanotubes and underlying substrate can be simultaneously resolved and suggest the preferential alignment of isolated SWNTs along the [110] direction on the GaAs surface. Scanning tunneling spectroscopy (STS) measurements reveal SWNT bandgaps contained wholly within the substrate gap, with the measured values of those energy gaps comparing favorably to theoretically predicted values.

Original languageEnglish (US)
Title of host publication2004 4th IEEE Conference on Nanotechnology
Pages13-15
Number of pages3
StatePublished - Dec 1 2004
Event2004 4th IEEE Conference on Nanotechnology - Munich, Germany
Duration: Aug 16 2004Aug 19 2004

Publication series

Name2004 4th IEEE Conference on Nanotechnology

Other

Other2004 4th IEEE Conference on Nanotechnology
CountryGermany
CityMunich
Period8/16/048/19/04

Fingerprint

Single-walled carbon nanotubes (SWCN)
Microscopes
Scanning
Energy gap
Substrates
Ultrahigh vacuum
Nanotubes
Contamination
Spectroscopy
Semiconductor materials

Keywords

  • Carbon nanotubes
  • Molecular electronics
  • Nanotechnology
  • Semiconductor materials

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ruppalt, L. B., Albrecht, P. M., & Lyding, J. W. (2004). Deposition and STM investigation of single-walled carbon nanotubes on GaAs(110). In 2004 4th IEEE Conference on Nanotechnology (pp. 13-15). (2004 4th IEEE Conference on Nanotechnology).

Deposition and STM investigation of single-walled carbon nanotubes on GaAs(110). / Ruppalt, Laura B.; Albrecht, Peter M.; Lyding, Joseph W.

2004 4th IEEE Conference on Nanotechnology. 2004. p. 13-15 (2004 4th IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ruppalt, LB, Albrecht, PM & Lyding, JW 2004, Deposition and STM investigation of single-walled carbon nanotubes on GaAs(110). in 2004 4th IEEE Conference on Nanotechnology. 2004 4th IEEE Conference on Nanotechnology, pp. 13-15, 2004 4th IEEE Conference on Nanotechnology, Munich, Germany, 8/16/04.
Ruppalt LB, Albrecht PM, Lyding JW. Deposition and STM investigation of single-walled carbon nanotubes on GaAs(110). In 2004 4th IEEE Conference on Nanotechnology. 2004. p. 13-15. (2004 4th IEEE Conference on Nanotechnology).
Ruppalt, Laura B. ; Albrecht, Peter M. ; Lyding, Joseph W. / Deposition and STM investigation of single-walled carbon nanotubes on GaAs(110). 2004 4th IEEE Conference on Nanotechnology. 2004. pp. 13-15 (2004 4th IEEE Conference on Nanotechnology).
@inproceedings{d9a301ff8cd84a7e93657fd9b02c4a75,
title = "Deposition and STM investigation of single-walled carbon nanotubes on GaAs(110)",
abstract = "We have applied single walled carbon nanotubes (SWNTs) to the cleaved GaAs (110) surface in ultra high vacuum using a Dry Contact Transfer (DCT) procedure and studied the system using a scanning tunneling microscope (STM). STM images reveal a clean transfer of predominantly isolated SWNTs to the semiconductor surface, with minimal additional contamination to the substrate surface. Atomic features of the nanotubes and underlying substrate can be simultaneously resolved and suggest the preferential alignment of isolated SWNTs along the [110] direction on the GaAs surface. Scanning tunneling spectroscopy (STS) measurements reveal SWNT bandgaps contained wholly within the substrate gap, with the measured values of those energy gaps comparing favorably to theoretically predicted values.",
keywords = "Carbon nanotubes, Molecular electronics, Nanotechnology, Semiconductor materials",
author = "Ruppalt, {Laura B.} and Albrecht, {Peter M.} and Lyding, {Joseph W}",
year = "2004",
month = "12",
day = "1",
language = "English (US)",
isbn = "0780385365",
series = "2004 4th IEEE Conference on Nanotechnology",
pages = "13--15",
booktitle = "2004 4th IEEE Conference on Nanotechnology",

}

TY - GEN

T1 - Deposition and STM investigation of single-walled carbon nanotubes on GaAs(110)

AU - Ruppalt, Laura B.

AU - Albrecht, Peter M.

AU - Lyding, Joseph W

PY - 2004/12/1

Y1 - 2004/12/1

N2 - We have applied single walled carbon nanotubes (SWNTs) to the cleaved GaAs (110) surface in ultra high vacuum using a Dry Contact Transfer (DCT) procedure and studied the system using a scanning tunneling microscope (STM). STM images reveal a clean transfer of predominantly isolated SWNTs to the semiconductor surface, with minimal additional contamination to the substrate surface. Atomic features of the nanotubes and underlying substrate can be simultaneously resolved and suggest the preferential alignment of isolated SWNTs along the [110] direction on the GaAs surface. Scanning tunneling spectroscopy (STS) measurements reveal SWNT bandgaps contained wholly within the substrate gap, with the measured values of those energy gaps comparing favorably to theoretically predicted values.

AB - We have applied single walled carbon nanotubes (SWNTs) to the cleaved GaAs (110) surface in ultra high vacuum using a Dry Contact Transfer (DCT) procedure and studied the system using a scanning tunneling microscope (STM). STM images reveal a clean transfer of predominantly isolated SWNTs to the semiconductor surface, with minimal additional contamination to the substrate surface. Atomic features of the nanotubes and underlying substrate can be simultaneously resolved and suggest the preferential alignment of isolated SWNTs along the [110] direction on the GaAs surface. Scanning tunneling spectroscopy (STS) measurements reveal SWNT bandgaps contained wholly within the substrate gap, with the measured values of those energy gaps comparing favorably to theoretically predicted values.

KW - Carbon nanotubes

KW - Molecular electronics

KW - Nanotechnology

KW - Semiconductor materials

UR - http://www.scopus.com/inward/record.url?scp=20344408321&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20344408321&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0780385365

T3 - 2004 4th IEEE Conference on Nanotechnology

SP - 13

EP - 15

BT - 2004 4th IEEE Conference on Nanotechnology

ER -