Dependence on doping type (p/n) of the water vapor oxidation of high-gap AlxGa1-xAs

F. A. Kish; S. A. Maranowski; G. E. Höfler; N. Holonyak; S. J. Caracci; J. M. Dallesasse; K. C. Hsieh

doi:10.1063/1.106730

Dependence on doping type (p/n) of the water vapor oxidation of high-gap Al_xGa_1-xAs

F. A. Kish, S. A. Maranowski, G. E. Höfler, N. Holonyak, S. J. Caracci, J. M. Dallesasse, K. C. Hsieh

Research output: Contribution to journal › Article › peer-review

Abstract

The oxidation (H₂O vapor+N₂ carrier gas, 425-525°C) of high-gap Al_xGa_1-xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect significantly the oxidation rate, with p-type samples oxidizing more rapidly than n-type samples. Classical oxidation theory is employed to explain these phenomena which are related to the position of the Fermi level in the samples.

Original language	English (US)
Pages (from-to)	3165-3167
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	25
DOIs	https://doi.org/10.1063/1.106730
State	Published - 1992

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.106730

Library availability

Discover UIUC Full Text

Cite this

@article{81b8f1c0839e41b2aa76636dd21eeb0c,

title = "Dependence on doping type (p/n) of the water vapor oxidation of high-gap AlxGa1-xAs",

abstract = "The oxidation (H2O vapor+N2 carrier gas, 425-525°C) of high-gap AlxGa1-xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect significantly the oxidation rate, with p-type samples oxidizing more rapidly than n-type samples. Classical oxidation theory is employed to explain these phenomena which are related to the position of the Fermi level in the samples.",

author = "Kish, {F. A.} and Maranowski, {S. A.} and H{\"o}fler, {G. E.} and N. Holonyak and Caracci, {S. J.} and Dallesasse, {J. M.} and Hsieh, {K. C.}",

year = "1992",

doi = "10.1063/1.106730",

language = "English (US)",

volume = "60",

pages = "3165--3167",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - Dependence on doping type (p/n) of the water vapor oxidation of high-gap AlxGa1-xAs

AU - Kish, F. A.

AU - Maranowski, S. A.

AU - Höfler, G. E.

AU - Holonyak, N.

AU - Caracci, S. J.

AU - Dallesasse, J. M.

AU - Hsieh, K. C.

PY - 1992

Y1 - 1992

N2 - The oxidation (H2O vapor+N2 carrier gas, 425-525°C) of high-gap AlxGa1-xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect significantly the oxidation rate, with p-type samples oxidizing more rapidly than n-type samples. Classical oxidation theory is employed to explain these phenomena which are related to the position of the Fermi level in the samples.

AB - The oxidation (H2O vapor+N2 carrier gas, 425-525°C) of high-gap AlxGa1-xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect significantly the oxidation rate, with p-type samples oxidizing more rapidly than n-type samples. Classical oxidation theory is employed to explain these phenomena which are related to the position of the Fermi level in the samples.

UR - http://www.scopus.com/inward/record.url?scp=0004558206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0004558206&partnerID=8YFLogxK

U2 - 10.1063/1.106730

DO - 10.1063/1.106730

M3 - Article

AN - SCOPUS:0004558206

SN - 0003-6951

VL - 60

SP - 3165

EP - 3167

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -