Dependence on doping type (p/n) of the water vapor oxidation of high-gap AlxGa1-xAs

F. A. Kish, S. A. Maranowski, G. E. Höfler, N. Holonyak, S. J. Caracci, J. M. Dallesasse, K. C. Hsieh

Research output: Contribution to journalArticlepeer-review

Abstract

The oxidation (H2O vapor+N2 carrier gas, 425-525°C) of high-gap AlxGa1-xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect significantly the oxidation rate, with p-type samples oxidizing more rapidly than n-type samples. Classical oxidation theory is employed to explain these phenomena which are related to the position of the Fermi level in the samples.

Original languageEnglish (US)
Pages (from-to)3165-3167
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number25
DOIs
StatePublished - Dec 1 1992

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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