The oxidation (H2O vapor+N2 carrier gas, 425-525°C) of high-gap AlxGa1-xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect significantly the oxidation rate, with p-type samples oxidizing more rapidly than n-type samples. Classical oxidation theory is employed to explain these phenomena which are related to the position of the Fermi level in the samples.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1992|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)