Voltages generated from inverse spin Hall and anisotropic magnetoresistance effects via spin pumping in ferromagnetic (F)/nonmagnetic (N) bilayers are investigated by means of a broadband ferromagnetic resonance approach. Varying the nonmagnetic layer thickness enables the determination of the spin diffusion length in Pd of 5.5 ± 0.5 nm. We also observe a systematic change of the voltage line shape when reversing the stacking order of the F/N bilayer, which is qualitatively consistent with expectations from spin Hall effects. However, even after independent calibration of the precession angle, systematic quantitative discrepancies in analyzing the data with spin Hall effects remain.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Aug 19 2013|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics