Dependence of near-surface dopant pile-up on post-implant annealing conditions

Prashun Gorai, Yevgeniy V. Kondratenko, Edmund G. Seebauer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Near-surface dopant pile-up at Si/SiO2 interfaces during post-implant annealing can affect the electrical performance of devices with shallow dopant profiles. Pile-up results from alterations in the charge state of dopant-related point defects, induced by near-surface band bending. The effects of annealing conditions on the evolution of pile-up are little known. The present work employs continuum simulations coupled with experiments in the case of B implanted into Si to show that annealing temperature, ramp rate, interface potential and annihilation probability, besides other factors, determine the growth kinetics and extent of pile-up. Annealing conditions under which pile-up is absent have also been identified.

Original languageEnglish (US)
Title of host publicationIon Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology
Pages253-256
Number of pages4
DOIs
StatePublished - Dec 1 2012
Event19th International Conference on Ion Implantation Technology 2012, IIT 2012 - Valladolid, Spain
Duration: Jun 25 2012Jun 29 2012

Publication series

NameAIP Conference Proceedings
Volume1496
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other19th International Conference on Ion Implantation Technology 2012, IIT 2012
CountrySpain
CityValladolid
Period6/25/126/29/12

Keywords

  • annealing
  • defects
  • diffusion
  • ion implantation
  • pile-up

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Gorai, P., Kondratenko, Y. V., & Seebauer, E. G. (2012). Dependence of near-surface dopant pile-up on post-implant annealing conditions. In Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology (pp. 253-256). (AIP Conference Proceedings; Vol. 1496). https://doi.org/10.1063/1.4766536