@inproceedings{cba18c7358924453912705e4c4d1c2a6,
title = "Dependence of near-surface dopant pile-up on post-implant annealing conditions",
abstract = "Near-surface dopant pile-up at Si/SiO2 interfaces during post-implant annealing can affect the electrical performance of devices with shallow dopant profiles. Pile-up results from alterations in the charge state of dopant-related point defects, induced by near-surface band bending. The effects of annealing conditions on the evolution of pile-up are little known. The present work employs continuum simulations coupled with experiments in the case of B implanted into Si to show that annealing temperature, ramp rate, interface potential and annihilation probability, besides other factors, determine the growth kinetics and extent of pile-up. Annealing conditions under which pile-up is absent have also been identified.",
keywords = "annealing, defects, diffusion, ion implantation, pile-up",
author = "Prashun Gorai and Kondratenko, {Yevgeniy V.} and Seebauer, {Edmund G.}",
year = "2012",
doi = "10.1063/1.4766536",
language = "English (US)",
isbn = "9780735411098",
series = "AIP Conference Proceedings",
pages = "253--256",
booktitle = "Ion Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology",
note = "19th International Conference on Ion Implantation Technology 2012, IIT 2012 ; Conference date: 25-06-2012 Through 29-06-2012",
}