Dependence of Current-Gain Cutoff Frequency on Gate Length in Submicron GaInAs/AlInAs MODFETs

A. A. Ketterson; J. Laskar; T. L. Brock; I. Adesida; J. Kolodzey; O. A. Aina; H. Hier

doi:10.1049/el:19890302

Dependence of Current-Gain Cutoff Frequency on Gate Length in Submicron GaInAs/AlInAs MODFETs

A. A. Ketterson, J. Laskar, T. L. Brock, I. Adesida, J. Kolodzey, O. A. Aina, H. Hier

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Abstract

We have investigated the gate length (L_g) dependence of the current-gain cutoff frequency f_T in lattice-matched GaInAs/AlInAs MODFETs. The transconductance is found to be relatively insensitive to gate length in this submicron regime, while the f_T increases with decreasing gate length due to reduced capacitance as dictated by the charge control model. An effective saturation velocity of 1.3 × 10⁷cm/s is deduced from the f_T-L_g dependence. A maximum f_T of 112 GHz is measured on an L_g = 0.15 µm device, limited mainly by parasitic charge in the AlInAs.

Original language	English (US)
Pages (from-to)	440-442
Number of pages	3
Journal	Electronics Letters
Volume	25
Issue number	7
DOIs	https://doi.org/10.1049/el:19890302
State	Published - Mar 30 1989

Keywords

FETs
Semiconductor devices and materials
Semiconductors (III-V)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19890302

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abstract = "We have investigated the gate length (Lg) dependence of the current-gain cutoff frequency fT in lattice-matched GaInAs/AlInAs MODFETs. The transconductance is found to be relatively insensitive to gate length in this submicron regime, while the fT increases with decreasing gate length due to reduced capacitance as dictated by the charge control model. An effective saturation velocity of 1.3 × 107cm/s is deduced from the fT-Lg dependence. A maximum fT of 112 GHz is measured on an Lg = 0.15 µm device, limited mainly by parasitic charge in the AlInAs.",

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T1 - Dependence of Current-Gain Cutoff Frequency on Gate Length in Submicron GaInAs/AlInAs MODFETs

AU - Ketterson, A. A.

AU - Laskar, J.

AU - Brock, T. L.

AU - Adesida, I.

AU - Kolodzey, J.

AU - Aina, O. A.

AU - Hier, H.

PY - 1989/3/30

Y1 - 1989/3/30

N2 - We have investigated the gate length (Lg) dependence of the current-gain cutoff frequency fT in lattice-matched GaInAs/AlInAs MODFETs. The transconductance is found to be relatively insensitive to gate length in this submicron regime, while the fT increases with decreasing gate length due to reduced capacitance as dictated by the charge control model. An effective saturation velocity of 1.3 × 107cm/s is deduced from the fT-Lg dependence. A maximum fT of 112 GHz is measured on an Lg = 0.15 µm device, limited mainly by parasitic charge in the AlInAs.

AB - We have investigated the gate length (Lg) dependence of the current-gain cutoff frequency fT in lattice-matched GaInAs/AlInAs MODFETs. The transconductance is found to be relatively insensitive to gate length in this submicron regime, while the fT increases with decreasing gate length due to reduced capacitance as dictated by the charge control model. An effective saturation velocity of 1.3 × 107cm/s is deduced from the fT-Lg dependence. A maximum fT of 112 GHz is measured on an Lg = 0.15 µm device, limited mainly by parasitic charge in the AlInAs.

KW - FETs

KW - Semiconductor devices and materials

KW - Semiconductors (III-V)

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Dependence of Current-Gain Cutoff Frequency on Gate Length in Submicron GaInAs/AlInAs MODFETs

Abstract

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