Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature

Z. Vashaei, C. Bayram, M. Razeghi

Research output: Contribution to journalArticle

Abstract

GaN/AlN resonant tunneling diodes (RTD) were grown by metal-organic chemical vapor deposition (MOCVD) and negative differential resistance with peak-to-valley ratios as high as 2.15 at room temperature was demonstrated. Effect of material quality on RTDs' performance was investigated by growing RTD structures on AlN, GaN, and lateral epitaxial overgrowth GaN templates. Our results reveal that negative differential resistance characteristics of RTDs are very sensitive to material quality (such as surface roughness) and MOCVD is a suitable technique for III-nitride-based quantum devices.

Original languageEnglish (US)
Article number083505
JournalJournal of Applied Physics
Volume107
Issue number8
DOIs
StatePublished - Apr 15 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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