We report the growth and characterization of long wavelength infrared type-II InAs/GaSb superlattice photodiodes with a 50% cut-off wavelength at 11 μm, on GaAs substrate. Despite a 7.3% lattice mismatch to the substrate, photodiodes passivated with polyimide exhibit an R0 A value of 35 Ω cm2 at 77 K, which is in the same order of magnitude as reference devices grown on native GaSb substrate. With a reverse applied bias less than 500 mV, the dark current density and differential resistance-area product are close to that of devices on GaSb substrate, within the tolerance of the processing and measurement. The quantum efficiency attains the expected value of 20% at zero bias, resulting in a Johnson limited detectivity of 1.1× 1011 Jones. Although some difference in performances is observed, devices grown on GaAs substrate already attained the background limit performance at 77 K with a 300 K background and a 2π field of view.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Nov 10 2009|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)