Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link

Douglas M. Gill; Jonathan E. Proesel; Chi Xiong; Jason S. Orcutt; Jessie C. Rosenberg; Marwan H. Khater; Tymon Barwicz; Solomon Assefa; Steven M. Shank; Carol Reinholm; John Ellis-Monaghan; Edward Kiewra; Swetha Kamlapurkar; Chris M. Breslin; William M.J. Green; Wilfried Haensch; Yurii A. Vlasov

doi:10.1109/JSTQE.2014.2381468

Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link

Douglas M. Gill, Jonathan E. Proesel, Chi Xiong, Jason S. Orcutt, Jessie C. Rosenberg, Marwan H. Khater, Tymon Barwicz, Solomon Assefa, Steven M. Shank, Carol Reinholm, John Ellis-Monaghan, Edward Kiewra, Swetha Kamlapurkar, Chris M. Breslin, William M.J. Green, Wilfried Haensch, Yurii A. Vlasov

Research output: Contribution to journal › Article › peer-review

Abstract

We present a 16-Gb/s transmitter composed of a stacked voltage-mode CMOS driver and periodic-loaded reverse biased pn junction Mach-Zehnder modulator. The transmitter shows 9-dB extinction ratio and 10.3-pJ/bit power consumption and operates with 1.3 μm light. Penalties as low as 0.5 dB were seen as compared to a 25-Gb/s LiNbO₃ transmitter with both a monolithic metal-semiconductor-metal receiver and a reference receiver at 16-Gb/s operation. We also present an analytic expression for relative transmitter penalty (RTP), which allows one to quickly assess the system impact of design parameters such as peak-to-peak modulator drive voltage, modulator figure of merit, and transmitter extinction ratio to determine the circumstances under which a stacked CMOS cascode driver is desirable.

Original language	English (US)
Article number	6990765
Pages (from-to)	212-222
Number of pages	11
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	21
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2014.2381468
State	Published - Jul 1 2015
Externally published	Yes

Keywords

Electrooptic Modulators
Electrooptic devices
Integrated Optics

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/JSTQE.2014.2381468

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Gill, D. M., Proesel, J. E., Xiong, C., Orcutt, J. S., Rosenberg, J. C., Khater, M. H., Barwicz, T., Assefa, S., Shank, S. M., Reinholm, C., Ellis-Monaghan, J., Kiewra, E., Kamlapurkar, S., Breslin, C. M., Green, W. M. J., Haensch, W., & Vlasov, Y. A. (2015). Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link. IEEE Journal of Selected Topics in Quantum Electronics, 21(4), 212-222. [6990765]. https://doi.org/10.1109/JSTQE.2014.2381468

Gill, DM, Proesel, JE, Xiong, C, Orcutt, JS, Rosenberg, JC, Khater, MH, Barwicz, T, Assefa, S, Shank, SM, Reinholm, C, Ellis-Monaghan, J, Kiewra, E, Kamlapurkar, S, Breslin, CM, Green, WMJ, Haensch, W & Vlasov, YA 2015, 'Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link', IEEE Journal of Selected Topics in Quantum Electronics, vol. 21, no. 4, 6990765, pp. 212-222. https://doi.org/10.1109/JSTQE.2014.2381468

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abstract = "We present a 16-Gb/s transmitter composed of a stacked voltage-mode CMOS driver and periodic-loaded reverse biased pn junction Mach-Zehnder modulator. The transmitter shows 9-dB extinction ratio and 10.3-pJ/bit power consumption and operates with 1.3 μm light. Penalties as low as 0.5 dB were seen as compared to a 25-Gb/s LiNbO3 transmitter with both a monolithic metal-semiconductor-metal receiver and a reference receiver at 16-Gb/s operation. We also present an analytic expression for relative transmitter penalty (RTP), which allows one to quickly assess the system impact of design parameters such as peak-to-peak modulator drive voltage, modulator figure of merit, and transmitter extinction ratio to determine the circumstances under which a stacked CMOS cascode driver is desirable.",

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AU - Barwicz, Tymon

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AU - Reinholm, Carol

AU - Ellis-Monaghan, John

AU - Kiewra, Edward

AU - Kamlapurkar, Swetha

AU - Breslin, Chris M.

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AU - Haensch, Wilfried

AU - Vlasov, Yurii A.

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N2 - We present a 16-Gb/s transmitter composed of a stacked voltage-mode CMOS driver and periodic-loaded reverse biased pn junction Mach-Zehnder modulator. The transmitter shows 9-dB extinction ratio and 10.3-pJ/bit power consumption and operates with 1.3 μm light. Penalties as low as 0.5 dB were seen as compared to a 25-Gb/s LiNbO3 transmitter with both a monolithic metal-semiconductor-metal receiver and a reference receiver at 16-Gb/s operation. We also present an analytic expression for relative transmitter penalty (RTP), which allows one to quickly assess the system impact of design parameters such as peak-to-peak modulator drive voltage, modulator figure of merit, and transmitter extinction ratio to determine the circumstances under which a stacked CMOS cascode driver is desirable.

AB - We present a 16-Gb/s transmitter composed of a stacked voltage-mode CMOS driver and periodic-loaded reverse biased pn junction Mach-Zehnder modulator. The transmitter shows 9-dB extinction ratio and 10.3-pJ/bit power consumption and operates with 1.3 μm light. Penalties as low as 0.5 dB were seen as compared to a 25-Gb/s LiNbO3 transmitter with both a monolithic metal-semiconductor-metal receiver and a reference receiver at 16-Gb/s operation. We also present an analytic expression for relative transmitter penalty (RTP), which allows one to quickly assess the system impact of design parameters such as peak-to-peak modulator drive voltage, modulator figure of merit, and transmitter extinction ratio to determine the circumstances under which a stacked CMOS cascode driver is desirable.

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Demonstration of a high extinction ratio monolithic CMOS integrated nanophotonic transmitter and 16 Gb/s optical link

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