Delta-doping optimization for high quality p -type GaN

Delta (δ-) doping is studied in order to achieve high quality p -type GaN. Atomic force microscopy, x-ray diffraction, photoluminescence, and Hall measurements are performed on the samples to optimize the δ -doping characteristics. The effect of annealing on the electrical, optical, and structural quality is also investigated for different δ -doping parameters. Optimized pulsing conditions result in layers with hole concentrations near 1018 cm-3 and superior crystal quality compared to conventional p -GaN. This material improvement is achieved thanks to the reduction in the Mg activation energy and self-compensation effects in δ -doped p -GaN.