Delta-doping for enhanced tunnel junction performance and thermal stability

Yukun Sun, Shizhao Fan, Daehwan Jung, Ryan Hool, Brian Li, Michelle Vaisman, Minjoo Larry Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution


In this work, we show that delta-doping can dramatically improve the performance of tunnel junctions. As an example, one of our delta-doped tunnel junctions achieved a peak current of 3.59 kA/cm2, while its structurally identical counterpart without delta-doping reached a peak current of just 7.32 mA/cm2. Several different tunnel junction designs were explored with differing amounts of optical absorption, and all showed significant improvement from delta-doping. With the benefit of delta doping, all tunnel junctions investigated here are able to survive top cell growth conditions and additional rapid thermal annealing.

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781728104942
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States


  • Index Terms - tunnel junction
  • delta doping
  • solar cells
  • thermal stability

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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