Delta-Doping for Enhanced III-V Tunnel Junction Performance

Yukun Sun, Shizhao Fan, Daehwan Jung, Ryan D. Hool, Brian Li, Michelle Vaisman, Minjoo Lee

Research output: Contribution to journalArticlepeer-review


We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga0.51In0.49P clads is improved by a factor of ∼5 × 105. The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method.

Original languageEnglish (US)
Pages (from-to)976-981
Number of pages6
JournalIEEE Journal of Photovoltaics
Issue number4
StatePublished - Jul 1 2022
Externally publishedYes


  • Delta doping
  • tunnel junctions (TJs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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