We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga0.51In0.49P clads is improved by a factor of ∼5 × 105. The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method.
- Delta doping
- tunnel junctions (TJs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering