Delta-Doping for Enhanced III-V Tunnel Junction Performance

Yukun Sun; Shizhao Fan; Daehwan Jung; Ryan D. Hool; Brian Li; Michelle Vaisman; Minjoo Lee

doi:10.1109/JPHOTOV.2022.3176217

Delta-Doping for Enhanced III-V Tunnel Junction Performance

Yukun Sun, Shizhao Fan, Daehwan Jung, Ryan D. Hool, Brian Li, Michelle Vaisman, Minjoo Lee

Research output: Contribution to journal › Article › peer-review

Abstract

We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga0.51In0.49P clads is improved by a factor of ∼5 × 105. The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method.

Original language	English (US)
Pages (from-to)	976-981
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	12
Issue number	4
DOIs	https://doi.org/10.1109/JPHOTOV.2022.3176217
State	Published - Jul 1 2022

Keywords

Delta doping
tunnel junctions (TJs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1109/JPHOTOV.2022.3176217

Library availability

Discover UIUC Full Text

Cite this

@article{83dde255c2e843a49c2cbedcda01eec8,

title = "Delta-Doping for Enhanced III-V Tunnel Junction Performance",

abstract = "We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga0.51In0.49P clads is improved by a factor of ∼5 × 105. The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method.",

keywords = "Delta doping, tunnel junctions (TJs)",

author = "Yukun Sun and Shizhao Fan and Daehwan Jung and Hool, {Ryan D.} and Brian Li and Michelle Vaisman and Minjoo Lee",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2022",

month = jul,

day = "1",

doi = "10.1109/JPHOTOV.2022.3176217",

language = "English (US)",

volume = "12",

pages = "976--981",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

number = "4",

}

TY - JOUR

T1 - Delta-Doping for Enhanced III-V Tunnel Junction Performance

AU - Sun, Yukun

AU - Fan, Shizhao

AU - Jung, Daehwan

AU - Hool, Ryan D.

AU - Li, Brian

AU - Vaisman, Michelle

AU - Lee, Minjoo

PY - 2022/7/1

Y1 - 2022/7/1

N2 - We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga0.51In0.49P clads is improved by a factor of ∼5 × 105. The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method.

AB - We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga0.51In0.49P clads is improved by a factor of ∼5 × 105. The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method.

KW - Delta doping

KW - tunnel junctions (TJs)

UR - http://www.scopus.com/inward/record.url?scp=85131755476&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85131755476&partnerID=8YFLogxK

U2 - 10.1109/JPHOTOV.2022.3176217

DO - 10.1109/JPHOTOV.2022.3176217

M3 - Article

AN - SCOPUS:85131755476

SN - 2156-3381

VL - 12

SP - 976

EP - 981

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 4

ER -

Delta-Doping for Enhanced III-V Tunnel Junction Performance

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this