Delta-Doping for Enhanced III-V Tunnel Junction Performance

Yukun Sun; Shizhao Fan; Daehwan Jung; Ryan D. Hool; Brian Li; Michelle Vaisman; Minjoo Lee

doi:10.1109/JPHOTOV.2022.3176217

Delta-Doping for Enhanced III-V Tunnel Junction Performance

Yukun Sun, Shizhao Fan, Daehwan Jung, Ryan D. Hool, Brian Li, Michelle Vaisman, Minjoo Lee

Research output: Contribution to journal › Article › peer-review

Abstract

We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga0.51In0.49P clads is improved by a factor of ∼5 × 105. The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method.

Original language	English (US)
Pages (from-to)	976-981
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	12
Issue number	4
DOIs	https://doi.org/10.1109/JPHOTOV.2022.3176217
State	Published - Jul 1 2022
Externally published	Yes

Keywords

Delta doping
tunnel junctions (TJs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1109/JPHOTOV.2022.3176217

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title = "Delta-Doping for Enhanced III-V Tunnel Junction Performance",

abstract = "We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga0.51In0.49P clads is improved by a factor of ∼5 × 105. The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method.",

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AU - Sun, Yukun

AU - Fan, Shizhao

AU - Jung, Daehwan

AU - Hool, Ryan D.

AU - Li, Brian

AU - Vaisman, Michelle

AU - Lee, Minjoo

PY - 2022/7/1

Y1 - 2022/7/1

N2 - We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga0.51In0.49P clads is improved by a factor of ∼5 × 105. The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method.

AB - We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded by Ga0.51In0.49P clads is improved by a factor of ∼5 × 105. The relative benefits of delta-doping are even stronger in TJs based on wider-bandgap materials with reduced optical absorption. Importantly, we find that delta-doped TJs can survive the thermal loads that would be encountered during growth of additional subcells. Delta doping is a simple and versatile method to improve TJ performance that can be implemented by virtually any epitaxial growth method.

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Delta-Doping for Enhanced III-V Tunnel Junction Performance

Abstract

Keywords

ASJC Scopus subject areas

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