Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition

M. M. Wong, U. Chowdhury, D. Sicault, D. T. Becher, J. C. Denyszyn, T. G. Zhu, Milton Feng, R. D. Dupuis

Research output: Contribution to journalArticle

Abstract

The performance of an innovative delta-doped AlGaN/AlN/GaN heterojunction field-effect transistor (HFET) structure is reported. The epitaxial heterostructures were grown on semi-insulating SiC substrates by low-pressure metalorganic chemical vapour deposition These structures exhibit a maximum carrier mobility of 1058 cm2/V s and a sheet carrier density of 2.35 × 1013 cm-2 at room temperature, corresponding to a large nsμn product of 2.49 × 1016 V s. HFET devices with 0.25 μm gate length were fabricated and exhibited a maximum current density as high as 1.5 A/mm (at VG = + 1 V) and a peak transconductance of gm = 240 mS/mm. High-frequency device measurements yielded a cutoff frequency of ft ≃ 50 GHz and maximum oscillation frequency fmax ≃ 130 GHz.

Original languageEnglish (US)
Pages (from-to)428-429
Number of pages2
JournalElectronics Letters
Volume38
Issue number9
DOIs
StatePublished - Apr 25 2002

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Wong, M. M., Chowdhury, U., Sicault, D., Becher, D. T., Denyszyn, J. C., Zhu, T. G., Feng, M., & Dupuis, R. D. (2002). Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition. Electronics Letters, 38(9), 428-429. https://doi.org/10.1049/el:20020247