Degradation of Insulators in Silicon Selective Epitaxial Growth (SEG) Ambient

R. Bashir, S. Kim, N. Oadri, D. Jin, G. W. Neudeck, J. P. Denton, G. Yeric, K. Wu, A. Tasch

Research output: Contribution to journalArticlepeer-review


The degradation of various insulators in Silicon Selective Epitaxial Growth (SEG) ambient was studied. The insulators studied were thermal oxide, reoxidized nitride/oxide stack, poly-oxide, and nitrided oxide. Breakdown electric fields of MIS capacitors were measured and yields were calculated before and after the insulators were exposed to Silicon SEG ambient. It was found that the nitrided oxide was more resistant to degradation in the SEG ambient than thermal and poly oxide; results reported here for the first time. The increased resistance of nitrided oxide in SEG ambient coupled with their superior performance as thin gate insulators makes them an excellent candidate for use in novel 3-D structures using selective silicon growth.

Original languageEnglish (US)
Pages (from-to)382-384
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 1995
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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