Abstract
MgO and Al2O3 crystals have been implanted with Ne ions at temperatures between 90 K and 720 K and the damaged layers were investigated by optical absorption spectroscopy and X-ray diffraction. The damage production is discussed in terms of the number of F-centers, of the change of the lattice parameter, and of the diffuse scattering intensity close to Bragg reflections. The stability of the defects was tested in addition by subsequent subthreshold e--irradiations. No effect of an applied electric field on the defect production is observed for both oxides.
Original language | English (US) |
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Pages (from-to) | 169-173 |
Number of pages | 5 |
Journal | Radiation Effects and Defects in Solids |
Volume | 136 |
Issue number | 1-4 |
DOIs | |
State | Published - 1995 |
Keywords
- AI2O3
- F-centers
- MgO
- defect agglomerates
- electron irradiation
- ion implantation
ASJC Scopus subject areas
- Radiation
- Nuclear and High Energy Physics
- General Materials Science
- Condensed Matter Physics