Defects in ion implanted and electron irradiated MgO and A1203

P. Ehrhart, R. S. Averback, A. I. Popov, A. v. Sambeek

Research output: Contribution to journalArticlepeer-review


MgO and Al2O3 crystals have been implanted with Ne ions at temperatures between 90 K and 720 K and the damaged layers were investigated by optical absorption spectroscopy and X-ray diffraction. The damage production is discussed in terms of the number of F-centers, of the change of the lattice parameter, and of the diffuse scattering intensity close to Bragg reflections. The stability of the defects was tested in addition by subsequent subthreshold e--irradiations. No effect of an applied electric field on the defect production is observed for both oxides.

Original languageEnglish (US)
Pages (from-to)169-173
Number of pages5
JournalRadiation Effects and Defects in Solids
Issue number1-4
StatePublished - 1995


  • AI2O3
  • F-centers
  • MgO
  • defect agglomerates
  • electron irradiation
  • ion implantation

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Condensed Matter Physics


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