@article{e074513574c64eed8af1b090d2299b6f,
title = "Defect selective etching of GaAsyP1-yphotovoltaic materials",
abstract = "Rapid and accurate threading dislocation density (TDD) characterization of direct-gap GaAsyP1-yphotovoltaic materials using molten KOH defect selective etching (DSE) is demonstrated. TDDs measured using molten KOH DSE show close agreement with those from both electron beam-induced current mapping and planar view transmission electron microscopy, provided TDD<107cm-2. H3PO4DSE is also demonstrated as an accurate method for characterizing TDD of GaP substrates. Taken together, the DSE methods described here enable TDD characterization over large areas (>105μm2) from substrate to GaAsyP1-ydevice layer.",
keywords = "A1. Defects, A1. Etching, A3. Molecular beam epitaxy, B2. Semiconducting III-V materials, B2. Semiconducting gallium arsenide, B3. Solar cells",
author = "Yaung, {Kevin Nay} and Stephanie Tomasulo and Lang, {Jordan R.} and Joseph Faucher and Lee, {Minjoo Larry}",
note = "Funding Information: We gratefully acknowledge funding from the NSF CAREER program (Grant no. DMR-09559616 ). K.N.Y. was supported by the Singapore Energy Innovation Programme Office for a National Research Foundation — Prime Minister׳s Office, Republic of Singapore graduate fellowship. S.T. was supported by an award from the US Department of Energy (DOE) Office of Science Graduate Fellowship Program (DOE SCGF), made possible in part by the American Recovery and Reinvestment Act of 2009, administered by ORISE-ORAU under Contract no. DE-AC05-06OR23100 . All opinions expressed in this paper are the authors׳, and do not necessarily reflect the policies and views of DOE, ORAU, or ORISE. JRL was supported by a postdoctoral fellowship from the Yale Climate and Energy Institute . Microscopy and XRD facilities used in this work were supported by the Yale Institute for Nanoscience and Quantum Engineering and National Science Foundation MRSECDMR 1119826 . Research was carried out in part at the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract no. DE-AC02-98CH10886. Publisher Copyright: {\textcopyright} 2014 Elsevier B.V.",
year = "2014",
month = oct,
day = "15",
doi = "10.1016/j.jcrysgro.2014.07.005",
language = "English (US)",
volume = "404",
pages = "140--145",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
}