Defect selective etching of GaAsyP1-yphotovoltaic materials

Kevin Nay Yaung; Stephanie Tomasulo; Jordan R. Lang; Joseph Faucher; Minjoo Larry Lee

doi:10.1016/j.jcrysgro.2014.07.005

Defect selective etching of GaAs_yP_1-yphotovoltaic materials

Kevin Nay Yaung, Stephanie Tomasulo, Jordan R. Lang, Joseph Faucher, Minjoo Larry Lee

Research output: Contribution to journal › Article › peer-review

Abstract

Rapid and accurate threading dislocation density (TDD) characterization of direct-gap GaAs_yP_1-yphotovoltaic materials using molten KOH defect selective etching (DSE) is demonstrated. TDDs measured using molten KOH DSE show close agreement with those from both electron beam-induced current mapping and planar view transmission electron microscopy, provided TDD<10⁷cm^-2. H₃PO₄DSE is also demonstrated as an accurate method for characterizing TDD of GaP substrates. Taken together, the DSE methods described here enable TDD characterization over large areas (>10⁵μm²) from substrate to GaAs_yP_1-ydevice layer.

Original language	English (US)
Pages (from-to)	140-145
Number of pages	6
Journal	Journal of Crystal Growth
Volume	404
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.07.005
State	Published - Oct 15 2014
Externally published	Yes

Keywords

A1. Defects
A1. Etching
A3. Molecular beam epitaxy
B2. Semiconducting III-V materials
B2. Semiconducting gallium arsenide
B3. Solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Online availability

10.1016/j.jcrysgro.2014.07.005

Library availability

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Cite this

@article{e074513574c64eed8af1b090d2299b6f,

title = "Defect selective etching of GaAsyP1-yphotovoltaic materials",

abstract = "Rapid and accurate threading dislocation density (TDD) characterization of direct-gap GaAsyP1-yphotovoltaic materials using molten KOH defect selective etching (DSE) is demonstrated. TDDs measured using molten KOH DSE show close agreement with those from both electron beam-induced current mapping and planar view transmission electron microscopy, provided TDD<107cm-2. H3PO4DSE is also demonstrated as an accurate method for characterizing TDD of GaP substrates. Taken together, the DSE methods described here enable TDD characterization over large areas (>105μm2) from substrate to GaAsyP1-ydevice layer.",

keywords = "A1. Defects, A1. Etching, A3. Molecular beam epitaxy, B2. Semiconducting III-V materials, B2. Semiconducting gallium arsenide, B3. Solar cells",

author = "Yaung, {Kevin Nay} and Stephanie Tomasulo and Lang, {Jordan R.} and Joseph Faucher and Lee, {Minjoo Larry}",

note = "Publisher Copyright: {\textcopyright} 2014 Elsevier B.V.",

year = "2014",

month = oct,

day = "15",

doi = "10.1016/j.jcrysgro.2014.07.005",

language = "English (US)",

volume = "404",

pages = "140--145",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Defect selective etching of GaAsyP1-yphotovoltaic materials

AU - Yaung, Kevin Nay

AU - Tomasulo, Stephanie

AU - Lang, Jordan R.

AU - Faucher, Joseph

AU - Lee, Minjoo Larry

PY - 2014/10/15

Y1 - 2014/10/15

N2 - Rapid and accurate threading dislocation density (TDD) characterization of direct-gap GaAsyP1-yphotovoltaic materials using molten KOH defect selective etching (DSE) is demonstrated. TDDs measured using molten KOH DSE show close agreement with those from both electron beam-induced current mapping and planar view transmission electron microscopy, provided TDD<107cm-2. H3PO4DSE is also demonstrated as an accurate method for characterizing TDD of GaP substrates. Taken together, the DSE methods described here enable TDD characterization over large areas (>105μm2) from substrate to GaAsyP1-ydevice layer.

AB - Rapid and accurate threading dislocation density (TDD) characterization of direct-gap GaAsyP1-yphotovoltaic materials using molten KOH defect selective etching (DSE) is demonstrated. TDDs measured using molten KOH DSE show close agreement with those from both electron beam-induced current mapping and planar view transmission electron microscopy, provided TDD<107cm-2. H3PO4DSE is also demonstrated as an accurate method for characterizing TDD of GaP substrates. Taken together, the DSE methods described here enable TDD characterization over large areas (>105μm2) from substrate to GaAsyP1-ydevice layer.

KW - A1. Defects

KW - A1. Etching

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting III-V materials

KW - B2. Semiconducting gallium arsenide

KW - B3. Solar cells

UR - http://www.scopus.com/inward/record.url?scp=84907509721&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907509721&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2014.07.005

DO - 10.1016/j.jcrysgro.2014.07.005

M3 - Article

AN - SCOPUS:84907509721

SN - 0022-0248

VL - 404

SP - 140

EP - 145

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -