Defect selective etching of GaAsyP1-yphotovoltaic materials

Kevin Nay Yaung, Stephanie Tomasulo, Jordan R. Lang, Joseph Faucher, Minjoo Larry Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Rapid and accurate threading dislocation density (TDD) characterization of direct-gap GaAsyP1-yphotovoltaic materials using molten KOH defect selective etching (DSE) is demonstrated. TDDs measured using molten KOH DSE show close agreement with those from both electron beam-induced current mapping and planar view transmission electron microscopy, provided TDD<107cm-2. H3PO4DSE is also demonstrated as an accurate method for characterizing TDD of GaP substrates. Taken together, the DSE methods described here enable TDD characterization over large areas (>105μm2) from substrate to GaAsyP1-ydevice layer.

Original languageEnglish (US)
Pages (from-to)140-145
Number of pages6
JournalJournal of Crystal Growth
Volume404
DOIs
StatePublished - Oct 15 2014
Externally publishedYes

Keywords

  • A1. Defects
  • A1. Etching
  • A3. Molecular beam epitaxy
  • B2. Semiconducting III-V materials
  • B2. Semiconducting gallium arsenide
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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