Abstract
Rapid and accurate threading dislocation density (TDD) characterization of direct-gap GaAsyP1-yphotovoltaic materials using molten KOH defect selective etching (DSE) is demonstrated. TDDs measured using molten KOH DSE show close agreement with those from both electron beam-induced current mapping and planar view transmission electron microscopy, provided TDD<107cm-2. H3PO4DSE is also demonstrated as an accurate method for characterizing TDD of GaP substrates. Taken together, the DSE methods described here enable TDD characterization over large areas (>105μm2) from substrate to GaAsyP1-ydevice layer.
Original language | English (US) |
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Pages (from-to) | 140-145 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 404 |
DOIs | |
State | Published - Oct 15 2014 |
Externally published | Yes |
Keywords
- A1. Defects
- A1. Etching
- A3. Molecular beam epitaxy
- B2. Semiconducting III-V materials
- B2. Semiconducting gallium arsenide
- B3. Solar cells
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry