TY - JOUR
T1 - Defect production in tungsten
T2 - A comparison between field-ion microscopy and molecular-dynamics simulations
AU - Zhong, Y.
AU - Nordlund, K.
AU - Ghaly, M.
AU - Averback, R.
PY - 1998
Y1 - 1998
N2 - Molecular dynamics (MD) computer simulations of 20 - 30 keV self-ion bombardment of W were performed and compared to past field-ion microscopy (FIM) studies [M. I. Current et al., Philos. Mag. A 47, 407 (1983)]. The simulations show that the unusually high defect production efficiencies obtained by FIM are a consequence of a surface effect, which greatly enhances defect production compared to that in the crystal interior. Comparison of clustering of vacancies and the formation of interstitial atoms found in the FIM experiments and MD simulations shows overall good agreement.
AB - Molecular dynamics (MD) computer simulations of 20 - 30 keV self-ion bombardment of W were performed and compared to past field-ion microscopy (FIM) studies [M. I. Current et al., Philos. Mag. A 47, 407 (1983)]. The simulations show that the unusually high defect production efficiencies obtained by FIM are a consequence of a surface effect, which greatly enhances defect production compared to that in the crystal interior. Comparison of clustering of vacancies and the formation of interstitial atoms found in the FIM experiments and MD simulations shows overall good agreement.
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U2 - 10.1103/PhysRevB.58.2361
DO - 10.1103/PhysRevB.58.2361
M3 - Article
AN - SCOPUS:0001080566
SN - 1098-0121
VL - 58
SP - 2361
EP - 2364
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 5
ER -