Defect production in copper and silver by light energetic ions

R. S. Averback, R. Benedek, K. L. Merkle

Research output: Contribution to journalArticle

Abstract

Measurements have been made of the change in residual electrical resistivity in thin-film specimens of Cu and Ag induced by light-ion irradiations (H,D,3He, 4He) below 10 K in the energy range 15-40 keV. The number of Frenkel pairs created per incident ion was deduced and compared with theoretical predictions. The efficiency factor (ratio of experimental to theoretical value) was found to decrease from ∼1 to 0.7 (0.9 to 0.65) for Cu (Ag) as the recoil spectrum was shifted to higher energies by increasing the projectile mass and/or energy.

Original languageEnglish (US)
Pages (from-to)455-457
Number of pages3
JournalApplied Physics Letters
Volume30
Issue number9
DOIs
StatePublished - Dec 1 1977
Externally publishedYes

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silver
copper
defects
ions
light ions
ion irradiation
energy
projectiles
electrical resistivity
thin films
predictions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Defect production in copper and silver by light energetic ions. / Averback, R. S.; Benedek, R.; Merkle, K. L.

In: Applied Physics Letters, Vol. 30, No. 9, 01.12.1977, p. 455-457.

Research output: Contribution to journalArticle

Averback, R. S. ; Benedek, R. ; Merkle, K. L. / Defect production in copper and silver by light energetic ions. In: Applied Physics Letters. 1977 ; Vol. 30, No. 9. pp. 455-457.
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