Abstract
A method for determining effective electronic stopping powers in metals is presented. The method involves measuring damage rates in thin films as a function of ion energy. The experimental results are compared with predictions based on Monte Carlo computer simulations. Results are presented for H, D, He, and Li projectiles on Cu, Ag, and Ni. The implication of these results for defect production is discussed.
Original language | English (US) |
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Pages (from-to) | 503-507 |
Number of pages | 5 |
Journal | Journal of Nuclear Materials |
Volume | 85-86 |
Issue number | PART 1 |
DOIs | |
State | Published - Dec 2 1979 |
Externally published | Yes |
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Materials Science(all)
- Nuclear Energy and Engineering