Defect ordering in epitaxial α-GaN(0001)

H. Z. Xiao; N. E. Lee; R. C. Powell; Z. Ma; L. J. Chou; L. H. Allen; J. E. Greene; A. Rockett

doi:10.1063/1.357873

Defect ordering in epitaxial α-GaN(0001)

H. Z. Xiao
, N. E. Lee
, R. C. Powell
, Z. Ma
, L. J. Chou
, L. H. Allen
, J. E. Greene
, A. Rockett

Research output: Contribution to journal › Article › peer-review

Abstract

The microstructure of nominally undoped epitaxial wurtzite-structure α-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped α-GaN films have an ordered point-defect structure. A model of this defect-ordered microstructure, based upon a comparison between experimental results and computer simulations, is proposed.

Original language	English (US)
Pages (from-to)	8195-8197
Number of pages	3
Journal	Journal of Applied Physics
Volume	76
Issue number	12
DOIs	https://doi.org/10.1063/1.357873
State	Published - 1994
Externally published	Yes

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General Physics and Astronomy

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10.1063/1.357873

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title = "Defect ordering in epitaxial α-GaN(0001)",

abstract = "The microstructure of nominally undoped epitaxial wurtzite-structure α-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped α-GaN films have an ordered point-defect structure. A model of this defect-ordered microstructure, based upon a comparison between experimental results and computer simulations, is proposed.",

author = "Xiao, \{H. Z.\} and Lee, \{N. E.\} and Powell, \{R. C.\} and Z. Ma and Chou, \{L. J.\} and Allen, \{L. H.\} and Greene, \{J. E.\} and A. Rockett",

year = "1994",

doi = "10.1063/1.357873",

language = "English (US)",

volume = "76",

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journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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T1 - Defect ordering in epitaxial α-GaN(0001)

AU - Xiao, H. Z.

AU - Lee, N. E.

AU - Powell, R. C.

AU - Ma, Z.

AU - Chou, L. J.

AU - Allen, L. H.

AU - Greene, J. E.

AU - Rockett, A.

PY - 1994

Y1 - 1994

N2 - The microstructure of nominally undoped epitaxial wurtzite-structure α-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped α-GaN films have an ordered point-defect structure. A model of this defect-ordered microstructure, based upon a comparison between experimental results and computer simulations, is proposed.

AB - The microstructure of nominally undoped epitaxial wurtzite-structure α-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped α-GaN films have an ordered point-defect structure. A model of this defect-ordered microstructure, based upon a comparison between experimental results and computer simulations, is proposed.

UR - https://www.scopus.com/pages/publications/0000278416

UR - https://www.scopus.com/pages/publications/0000278416#tab=citedBy

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SN - 0021-8979

VL - 76

SP - 8195

EP - 8197

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Defect ordering in epitaxial α-GaN(0001)

Abstract

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