Defect ordering in epitaxial α-GaN(0001)

H. Z. Xiao, N. E. Lee, R. C. Powell, Z. Ma, L. J. Chou, L. H. Allen, J. E. Greene, A. Rockett

Research output: Contribution to journalArticlepeer-review


The microstructure of nominally undoped epitaxial wurtzite-structure α-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped α-GaN films have an ordered point-defect structure. A model of this defect-ordered microstructure, based upon a comparison between experimental results and computer simulations, is proposed.

Original languageEnglish (US)
Pages (from-to)8195-8197
Number of pages3
JournalJournal of Applied Physics
Issue number12
StatePublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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