The microstructure of nominally undoped epitaxial wurtzite-structure α-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped α-GaN films have an ordered point-defect structure. A model of this defect-ordered microstructure, based upon a comparison between experimental results and computer simulations, is proposed.
ASJC Scopus subject areas
- Physics and Astronomy(all)