Defect engineering via surfaces for metal-oxide electronics

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent advances are presented relating to methods for engineering the behavior of point defects in oxide semiconductors like rutile TiO2 and ZnO. Self-diffusion experiments, supported by continuum computations, show that surfaces exert profound effects on defects within the bulk through two distinct mechanisms involving surface chemical bond exchange and electrostatics. Such effects are especially pronounced in confined geometries such as thin films, small particles and nanowires with high surface/volume ratios.

Original languageEnglish (US)
Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
EditorsJia Zhou, Ting-Ao Tang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479932962
DOIs
StatePublished - Jan 23 2014
Event2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
Duration: Oct 28 2014Oct 31 2014

Publication series

NameProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
CountryChina
CityGuilin
Period10/28/1410/31/14

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Computer Science Applications

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