Defect engineering in semiconductors through adsorption and photoexcitation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Engineering of point defects semiconductors is important for a variety of applications, including ion implantation/ annealing technology and crystal growth. We have developed two new new approaches to controlling point defect behavior - via the surface and photoexcitation. For example, the degree of chemical bond saturation at surfaces can affect dopant activation and transient enhanced diffusion (TED) in silicon during annealing for ultrashallow junction formation. Point defect such as interstitial atoms can add more easily to unsaturated dangling bonds than to saturated ones. Thus, maintaining an atomically clean surface during annealing greatly increases the annihilation probability. Simulations for boron and experiments for arsenic show that this effect leads to large and simultaneous improvements in dopant activation and TED. We also show that for diffusion rates of arsenic and silicon isotopes are increased nonthermally by more than an order of magnitude for modest illumination intensities of 0.7 W/cm2. Such effects are important in rapid thermal annealing technologies.

Original languageEnglish (US)
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages450-453
Number of pages4
DOIs
StatePublished - Aug 2 2007
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: Oct 23 2006Oct 26 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/23/0610/26/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Seebauer, E. G. (2007). Defect engineering in semiconductors through adsorption and photoexcitation. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 450-453). [4098133] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2006.306298