TY - GEN
T1 - Defect engineering in semiconductors for nanoelectronic devices
AU - Seebauer, Edmund G.
PY - 2010
Y1 - 2010
N2 - Many designs for nanoelectronic devices rely on semiconductor materials, whose properties depend upon point defects. Control of the number and spatial distribution of these defects is becoming increasingly important. Here, principles are outlined for accomplishing such control via manipulation of the chemical state of nearby surfaces and via photostimulation. The key mechanisms have been discovered only recently, and should operate with special effectiveness at the nanoscale.
AB - Many designs for nanoelectronic devices rely on semiconductor materials, whose properties depend upon point defects. Control of the number and spatial distribution of these defects is becoming increasingly important. Here, principles are outlined for accomplishing such control via manipulation of the chemical state of nearby surfaces and via photostimulation. The key mechanisms have been discovered only recently, and should operate with special effectiveness at the nanoscale.
UR - http://www.scopus.com/inward/record.url?scp=77951662778&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951662778&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424520
DO - 10.1109/INEC.2010.5424520
M3 - Conference contribution
AN - SCOPUS:77951662778
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 58
EP - 59
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -