Defect engineering in semiconductors for nanoelectronic devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Many designs for nanoelectronic devices rely on semiconductor materials, whose properties depend upon point defects. Control of the number and spatial distribution of these defects is becoming increasingly important. Here, principles are outlined for accomplishing such control via manipulation of the chemical state of nearby surfaces and via photostimulation. The key mechanisms have been discovered only recently, and should operate with special effectiveness at the nanoscale.

Original languageEnglish (US)
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages58-59
Number of pages2
DOIs
StatePublished - May 5 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: Jan 3 2010Jan 8 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period1/3/101/8/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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