Abstract
The present invention provides methods for controlling defects in materials, including point defects, such as interstitials and vacancies, and extended defects, including dislocations and clusters. Defect control provided by the present invention allows for fabrication and processing of materials and/or structures having a selected abundance, spatial distribution and/or concentration depth profile of one or more types of defects in a material, such as vacancies and/or interstitials in a crystalline material. Methods of the invention are useful for processing materials by controlling defects to access beneficial physical, optical, chemical and/or electronic properties.
| Original language | English (US) |
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| U.S. patent number | 8871670 |
| Filing date | 1/4/12 |
| State | Published - Oct 28 2014 |