@inproceedings{0738ed7c387e41929ad84fffa864c894,
title = "Defect engineering for ultrashallow junctions using surfaces",
abstract = "The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion and increase dopant activation. The present work demonstrates such effects experimentally for arsenic and boron.",
author = "Seebauer, {Edmund G.} and Yeong, {S. H.} and Srinivasan, {M. P.} and Kwok, {C. T.M.} and R. Vaidyanathan and Benjamin Colombeau and Lap Chan",
year = "2007",
doi = "10.1149/1.2727421",
language = "English (US)",
isbn = "9781566775502",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "365--371",
booktitle = "ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS",
edition = "1",
note = "International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}